High-resolution synchrotron-radiation core-level spectroscopy of decapped GaAs(100) surfaces

G. Le Lay, D. Mao, Antoine Kahn, Y. Hwu, G. Margaritondo

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132 Scopus citations

Abstract

We report a high-resolution core-level spectroscopy study of the (4×2)-c(8×2) GaAs(100) surface prepared by thermal decapping of surfaces grown by molecular-beam epitaxy. Ga and As 3d core levels are analyzed using very strict parameter conditions, and compared with core levels taken from cleaved GaAs(110). Two surface components are resolved in the Ga spectra while only one surface component is necessary for As. We tentatively assign the two Ga surface components to inequivalent Ga dimers in the unit cell; the As surface component is assigned to the threefold-coordinated second-layer As next to the missing row of Ga dimers. The position of the Fermi level on decapped n-type and p-type substrates is investigated in detail. The characterization of these clean decapped (100) surfaces provides a firm basis for further studies of electrical and chemical properties of metal-semiconductor interfaces.

Original languageEnglish (US)
Pages (from-to)14301-14304
Number of pages4
JournalPhysical Review B
Volume43
Issue number17
DOIs
StatePublished - Jan 1 1991

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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