Abstract
10 nm wide metal lines 30 nm apart, and 10 nm wide gaps over 300 nm long between two metal rectangles have been repeatedly achieved on thick GaAs substrates using a modified scanning electron microscope (SEM) operated at 35 keV and lift-off Ni/Au. Sub-50 nm overlay accuracy in multi-level e-beam lithography has also been achieved using the same modified SEM.
Original language | English (US) |
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Pages (from-to) | 141-144 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 21 |
Issue number | 1-4 |
DOIs | |
State | Published - Apr 1993 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering