High resolution electron beam lithography and high accuracy overlay using a modified SEM

P. B. Fischer, S. Y. Chou

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

10 nm wide metal lines 30 nm apart, and 10 nm wide gaps over 300 nm long between two metal rectangles have been repeatedly achieved on thick GaAs substrates using a modified scanning electron microscope (SEM) operated at 35 keV and lift-off Ni/Au. Sub-50 nm overlay accuracy in multi-level e-beam lithography has also been achieved using the same modified SEM.

Original languageEnglish (US)
Pages (from-to)141-144
Number of pages4
JournalMicroelectronic Engineering
Volume21
Issue number1-4
DOIs
StatePublished - Apr 1993
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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