10 nm wide metal lines 30 nm apart, and 10 nm wide gaps over 300 nm long between two metal rectangles have been repeatedly achieved on thick GaAs substrates using a modified scanning electron microscope (SEM) operated at 35 keV and lift-off Ni/Au. Sub-50 nm overlay accuracy in multi-level e-beam lithography has also been achieved using the same modified SEM.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering