High quantum efficiency photoluminescence from localized excitons in Si1-xGex

L. C. Lenchyshyn, M. L.W. Thewalt, J. C. Sturm, P. V. Schwartz, E. J. Prinz, N. L. Rowell, J. P. Noël, D. C. Houghton

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Abstract

We report a new photoluminescence process in epitaxial Si 1-xGex layers grown on Si by rapid thermal chemical vapor deposition which we attribute to the recombination of excitons localized at random alloy fluctuations. This luminescence is characterized by saturation at very low excitation densities (≅100 μW cm-2), very long decay times (≳1 ms), and high quantum efficiency at low excitation. We have directly measured an external photoluminescence quantum efficiency of 11.5±2%.

Original languageEnglish (US)
Pages (from-to)3174-3176
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number25
DOIs
StatePublished - 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Lenchyshyn, L. C., Thewalt, M. L. W., Sturm, J. C., Schwartz, P. V., Prinz, E. J., Rowell, N. L., Noël, J. P., & Houghton, D. C. (1992). High quantum efficiency photoluminescence from localized excitons in Si1-xGex. Applied Physics Letters, 60(25), 3174-3176. https://doi.org/10.1063/1.106733