High quantum efficiency photoluminescence from localized excitons in Si1-xGex

L. C. Lenchyshyn; M. L.W. Thewalt; J. C. Sturm; P. V. Schwartz; E. J. Prinz; N. L. Rowell; J. P. Noël; D. C. Houghton

doi:10.1063/1.106733

High quantum efficiency photoluminescence from localized excitons in Si_1-xGe_x

L. C. Lenchyshyn, M. L.W. Thewalt, J. C. Sturm, P. V. Schwartz, E. J. Prinz, N. L. Rowell, J. P. Noël, D. C. Houghton

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76 Scopus citations

Abstract

We report a new photoluminescence process in epitaxial Si _1-xGe_x layers grown on Si by rapid thermal chemical vapor deposition which we attribute to the recombination of excitons localized at random alloy fluctuations. This luminescence is characterized by saturation at very low excitation densities (≅100 μW cm^-2), very long decay times (≳1 ms), and high quantum efficiency at low excitation. We have directly measured an external photoluminescence quantum efficiency of 11.5±2%.

Original language	English (US)
Pages (from-to)	3174-3176
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	25
DOIs	https://doi.org/10.1063/1.106733
State	Published - 1992

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.106733

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@article{3897985864594e46ae90579e91cc2077,

title = "High quantum efficiency photoluminescence from localized excitons in Si1-xGex",

abstract = "We report a new photoluminescence process in epitaxial Si 1-xGex layers grown on Si by rapid thermal chemical vapor deposition which we attribute to the recombination of excitons localized at random alloy fluctuations. This luminescence is characterized by saturation at very low excitation densities (≅100 μW cm-2), very long decay times (≳1 ms), and high quantum efficiency at low excitation. We have directly measured an external photoluminescence quantum efficiency of 11.5±2%.",

author = "Lenchyshyn, {L. C.} and Thewalt, {M. L.W.} and Sturm, {J. C.} and Schwartz, {P. V.} and Prinz, {E. J.} and Rowell, {N. L.} and No{\"e}l, {J. P.} and Houghton, {D. C.}",

year = "1992",

doi = "10.1063/1.106733",

language = "English (US)",

volume = "60",

pages = "3174--3176",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

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TY - JOUR

T1 - High quantum efficiency photoluminescence from localized excitons in Si1-xGex

AU - Lenchyshyn, L. C.

AU - Thewalt, M. L.W.

AU - Sturm, J. C.

AU - Schwartz, P. V.

AU - Prinz, E. J.

AU - Rowell, N. L.

AU - Noël, J. P.

AU - Houghton, D. C.

PY - 1992

Y1 - 1992

N2 - We report a new photoluminescence process in epitaxial Si 1-xGex layers grown on Si by rapid thermal chemical vapor deposition which we attribute to the recombination of excitons localized at random alloy fluctuations. This luminescence is characterized by saturation at very low excitation densities (≅100 μW cm-2), very long decay times (≳1 ms), and high quantum efficiency at low excitation. We have directly measured an external photoluminescence quantum efficiency of 11.5±2%.

AB - We report a new photoluminescence process in epitaxial Si 1-xGex layers grown on Si by rapid thermal chemical vapor deposition which we attribute to the recombination of excitons localized at random alloy fluctuations. This luminescence is characterized by saturation at very low excitation densities (≅100 μW cm-2), very long decay times (≳1 ms), and high quantum efficiency at low excitation. We have directly measured an external photoluminescence quantum efficiency of 11.5±2%.

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UR - http://www.scopus.com/inward/citedby.url?scp=33744615461&partnerID=8YFLogxK

U2 - 10.1063/1.106733

DO - 10.1063/1.106733

M3 - Article

AN - SCOPUS:33744615461

SN - 0003-6951

VL - 60

SP - 3174

EP - 3176

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

High quantum efficiency photoluminescence from localized excitons in Si_1-xGe_x

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