High-quality two-dimensional electron system confined in an AlAs quantum well

T. S. Lay, J. J. Heremans, Y. W. Suen, M. B. Santos, K. Hirakawa, Mansour Shayegan, A. Zrenner

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Abstract

We report the fabrication and characterization of a high-quality two-dimensional electron system in the X-point valley of an AlAs quantum well. The modulation doped structure has a density of n s =2.5×10 11 cm -2 and low-temperature mobility μ=3×10 4 cm 2 /V s. Cyclotron resonance data reveal an effective mass m c =0.46m 0 , indicating that the X-point conduction valleys with heavy in-plane mass are occupied. In the magnetotransport data, we observe quantum Hall states at consecutive integral Landau-level fillings (ν), implying that the degeneracy of these valleys is lifted. Our data at high magnetic fields show well-developed fractional quantum Hall states at ν=1/3 and 2/3 with a gap of 1/3 Δ=1.3K for the ν=1/3 state at B≊30 T.

Original languageEnglish (US)
Pages (from-to)3120-3122
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number24
DOIs
StatePublished - Dec 1 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Lay, T. S., Heremans, J. J., Suen, Y. W., Santos, M. B., Hirakawa, K., Shayegan, M., & Zrenner, A. (1993). High-quality two-dimensional electron system confined in an AlAs quantum well. Applied Physics Letters, 62(24), 3120-3122. https://doi.org/10.1063/1.109128