High-quality two-dimensional electron system confined in an AlAs quantum well

T. S. Lay; J. J. Heremans; Y. W. Suen; M. B. Santos; K. Hirakawa; Mansour Shayegan; A. Zrenner

doi:10.1063/1.109128

High-quality two-dimensional electron system confined in an AlAs quantum well

T. S. Lay, J. J. Heremans, Y. W. Suen, M. B. Santos, K. Hirakawa, Mansour Shayegan, A. Zrenner

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43 Scopus citations

Abstract

We report the fabrication and characterization of a high-quality two-dimensional electron system in the X-point valley of an AlAs quantum well. The modulation doped structure has a density of n _s =2.5×10 ¹¹ cm ^-2 and low-temperature mobility μ=3×10 ⁴ cm ² /V s. Cyclotron resonance data reveal an effective mass m _c =0.46m ₀ , indicating that the X-point conduction valleys with heavy in-plane mass are occupied. In the magnetotransport data, we observe quantum Hall states at consecutive integral Landau-level fillings (ν), implying that the degeneracy of these valleys is lifted. Our data at high magnetic fields show well-developed fractional quantum Hall states at ν=1/3 and 2/3 with a gap of ^1/3 Δ=1.3K for the ν=1/3 state at B≊30 T.

Original language	English (US)
Pages (from-to)	3120-3122
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	24
DOIs	https://doi.org/10.1063/1.109128
State	Published - Dec 1 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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Lay, T. S., Heremans, J. J., Suen, Y. W., Santos, M. B., Hirakawa, K., Shayegan, M., & Zrenner, A. (1993). High-quality two-dimensional electron system confined in an AlAs quantum well. Applied Physics Letters, 62(24), 3120-3122. https://doi.org/10.1063/1.109128

@article{1ec11e2c9e03497bb7031a5f53ab6505,

title = "High-quality two-dimensional electron system confined in an AlAs quantum well",

abstract = " We report the fabrication and characterization of a high-quality two-dimensional electron system in the X-point valley of an AlAs quantum well. The modulation doped structure has a density of n s =2.5×10 11 cm -2 and low-temperature mobility μ=3×10 4 cm 2 /V s. Cyclotron resonance data reveal an effective mass m c =0.46m 0 , indicating that the X-point conduction valleys with heavy in-plane mass are occupied. In the magnetotransport data, we observe quantum Hall states at consecutive integral Landau-level fillings (ν), implying that the degeneracy of these valleys is lifted. Our data at high magnetic fields show well-developed fractional quantum Hall states at ν=1/3 and 2/3 with a gap of 1/3 Δ=1.3K for the ν=1/3 state at B≊30 T. ",

author = "Lay, {T. S.} and Heremans, {J. J.} and Suen, {Y. W.} and Santos, {M. B.} and K. Hirakawa and Mansour Shayegan and A. Zrenner",

year = "1993",

month = dec,

day = "1",

doi = "10.1063/1.109128",

language = "English (US)",

volume = "62",

pages = "3120--3122",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - High-quality two-dimensional electron system confined in an AlAs quantum well

AU - Lay, T. S.

AU - Heremans, J. J.

AU - Suen, Y. W.

AU - Santos, M. B.

AU - Hirakawa, K.

AU - Shayegan, Mansour

AU - Zrenner, A.

PY - 1993/12/1

Y1 - 1993/12/1

N2 - We report the fabrication and characterization of a high-quality two-dimensional electron system in the X-point valley of an AlAs quantum well. The modulation doped structure has a density of n s =2.5×10 11 cm -2 and low-temperature mobility μ=3×10 4 cm 2 /V s. Cyclotron resonance data reveal an effective mass m c =0.46m 0 , indicating that the X-point conduction valleys with heavy in-plane mass are occupied. In the magnetotransport data, we observe quantum Hall states at consecutive integral Landau-level fillings (ν), implying that the degeneracy of these valleys is lifted. Our data at high magnetic fields show well-developed fractional quantum Hall states at ν=1/3 and 2/3 with a gap of 1/3 Δ=1.3K for the ν=1/3 state at B≊30 T.

AB - We report the fabrication and characterization of a high-quality two-dimensional electron system in the X-point valley of an AlAs quantum well. The modulation doped structure has a density of n s =2.5×10 11 cm -2 and low-temperature mobility μ=3×10 4 cm 2 /V s. Cyclotron resonance data reveal an effective mass m c =0.46m 0 , indicating that the X-point conduction valleys with heavy in-plane mass are occupied. In the magnetotransport data, we observe quantum Hall states at consecutive integral Landau-level fillings (ν), implying that the degeneracy of these valleys is lifted. Our data at high magnetic fields show well-developed fractional quantum Hall states at ν=1/3 and 2/3 with a gap of 1/3 Δ=1.3K for the ν=1/3 state at B≊30 T.

UR - http://www.scopus.com/inward/record.url?scp=33847273445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847273445&partnerID=8YFLogxK

U2 - 10.1063/1.109128

DO - 10.1063/1.109128

M3 - Article

AN - SCOPUS:33847273445

VL - 62

SP - 3120

EP - 3122

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -