High-quality quantum point contact in two-dimensional GaAs (311) A hole system

J. Shabani; J. R. Petta; M. Shayegan

doi:10.1063/1.3036011

High-quality quantum point contact in two-dimensional GaAs (311) A hole system

J. Shabani, J. R. Petta, M. Shayegan

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality GaAs (311) A two-dimensional hole system using shallow etching and top gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate voltage), the source-drain data, and the negative magnetoresistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel.

Original language	English (US)
Article number	212101
Journal	Applied Physics Letters
Volume	93
Issue number	21
DOIs	https://doi.org/10.1063/1.3036011
State	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3036011

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title = "High-quality quantum point contact in two-dimensional GaAs (311) A hole system",

abstract = "We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality GaAs (311) A two-dimensional hole system using shallow etching and top gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate voltage), the source-drain data, and the negative magnetoresistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel.",

author = "J. Shabani and Petta, {J. R.} and M. Shayegan",

note = "Funding Information: This work was supported by the NSF MRSEC and DOE. The authors thank B. H. McGuyer for help with the measurements. ",

year = "2008",

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language = "English (US)",

volume = "93",

journal = "Applied Physics Letters",

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AU - Shabani, J.

AU - Petta, J. R.

AU - Shayegan, M.

N1 - Funding Information: This work was supported by the NSF MRSEC and DOE. The authors thank B. H. McGuyer for help with the measurements.

PY - 2008

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N2 - We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality GaAs (311) A two-dimensional hole system using shallow etching and top gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate voltage), the source-drain data, and the negative magnetoresistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel.

AB - We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality GaAs (311) A two-dimensional hole system using shallow etching and top gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate voltage), the source-drain data, and the negative magnetoresistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel.

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JF - Applied Physics Letters

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M1 - 212101

ER -

High-quality quantum point contact in two-dimensional GaAs (311) A hole system

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