We report the realization of a high quality electron system with variable areal density (ns) in a selectively doped, parabolic Ax Ga1-x As well. For each ns, quantum oscillations in the magnetoresistance are analyzed to obtain the electron densities of the electric subbands. These densities are in good agreement with the predictions of self-consistent calculations of the subband structure. The data reveal that with increasing ns, the width of the electron system increases so that the effective three-dimensional density and the Fermi energy remain essentially constant. The dependence of the low-temperature electron mobility on n s is also reported.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1989|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)