TY - JOUR
T1 - High-performance superlattice quantum cascade lasers
AU - Capasso, Federico
AU - Tredicucci, Alessandro
AU - Gmachl, Claire
AU - Sivco, Deborah L.
AU - Hutchinson, Albert L.
AU - Cho, Alfred Y.
AU - Scamarcio, Gaetano
N1 - Funding Information:
Manuscript received January 26, 1999; revised April 7, 1999. This work was supported in part by the Defense Advanced Research Projects Agency/U.S. Army Research Office under Contract DAAH04-96-C-0026 and Contract DAAG55-98-C-0050. F. Capasso, A. Tredicucci, C. Gmachl, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho are with Bell Laboratories, Murray Hill, NJ 07974 USA. G. Scamarcio is with INFM and Dipartimento di Fisica, Universita’ degli Studi di Bari, I-70126, Bari, Italy. Publisher Item Identifier S 1077-260X(99)06131-6.
PY - 1999/5
Y1 - 1999/5
N2 - Superlattice quantum cascade (QC) lasers based on optical transitions between conduction minibands are unipolar semiconductor lasers with high-current-carrying capability and attendant high optical power due to miniband transport in the active and in the injector regions. Other advantages include the intrinsic population inversion associated with the large interminiband-to-intraminiband relaxation time ratio and the high oscillator strength of the laser transition at the superlattice Brillouin zone boundary. This oscillator strength is significantly larger than that of intersubband transitions in double-quantum-well active regions of conventional cascade lasers, particularly at long infrared wavelengths (≥10 μm). Following a brief review of results on conventional QC lasers, design considerations for superlattice cascade lasers are discussed, along with recent advances in long-wavelength (11 μm) structures with doped active regions. Dopants broaden the gain spectrum and increase the laser threshold. Two laser designs that avoid doping of the active regions without causing electric-field-induced localization of the superlattice states are then presented, along with experimental results. In the first one, modulation doping creates a space-charge electric field that compensates the voltage drop across the undoped superlattice active regions. In the second scheme, the latter are designed with quantum wells of varying thickness (chirped superlattice), so that under application of the external field, the localized quantum well states overlap, forming minibands. Both schemes lead to considerably lower threshold current densities than devices with doped active regions, as well as to much higher peak optical power and to room-temperature operation. A record peak power of 500 mW at λ = 7.6 μm at room temperature is obtained with the chirped design. The latter also leads to the longest operating wavelength of any other QC laser (17 μm). The last section of the paper describes superlattice cascade
AB - Superlattice quantum cascade (QC) lasers based on optical transitions between conduction minibands are unipolar semiconductor lasers with high-current-carrying capability and attendant high optical power due to miniband transport in the active and in the injector regions. Other advantages include the intrinsic population inversion associated with the large interminiband-to-intraminiband relaxation time ratio and the high oscillator strength of the laser transition at the superlattice Brillouin zone boundary. This oscillator strength is significantly larger than that of intersubband transitions in double-quantum-well active regions of conventional cascade lasers, particularly at long infrared wavelengths (≥10 μm). Following a brief review of results on conventional QC lasers, design considerations for superlattice cascade lasers are discussed, along with recent advances in long-wavelength (11 μm) structures with doped active regions. Dopants broaden the gain spectrum and increase the laser threshold. Two laser designs that avoid doping of the active regions without causing electric-field-induced localization of the superlattice states are then presented, along with experimental results. In the first one, modulation doping creates a space-charge electric field that compensates the voltage drop across the undoped superlattice active regions. In the second scheme, the latter are designed with quantum wells of varying thickness (chirped superlattice), so that under application of the external field, the localized quantum well states overlap, forming minibands. Both schemes lead to considerably lower threshold current densities than devices with doped active regions, as well as to much higher peak optical power and to room-temperature operation. A record peak power of 500 mW at λ = 7.6 μm at room temperature is obtained with the chirped design. The latter also leads to the longest operating wavelength of any other QC laser (17 μm). The last section of the paper describes superlattice cascade
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U2 - 10.1109/2944.788453
DO - 10.1109/2944.788453
M3 - Article
AN - SCOPUS:0033124015
SN - 1077-260X
VL - 5
SP - 792
EP - 807
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
IS - 3
ER -