High performance sub-100 nm Si thin-film transistors by Pattern-controlled crystallization of Thin channel layer and High temperature annealing

Jian Gu, Wei Wu, S. Y. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we report the fabrication of high performance thin-film transistors (TFTs) down to sub-100 nm regime using Pattern-controlled crystallization of Thin channel layer and High temperature annealing (PaTH). High temperature is used to improve the film quality. Thin body thickness (Tsi) is used to suppress the short channel effects. The devices showed superior switching properties and device-to-device uniformity over conventional poly-Si TFTs.

Original languageEnglish (US)
Title of host publication60th Device Research Conference, DRC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages49-50
Number of pages2
ISBN (Electronic)0780373170
DOIs
StatePublished - Jan 1 2002
Event60th Device Research Conference, DRC 2002 - Santa Barbara, United States
Duration: Jun 24 2002Jun 26 2002

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2002-January
ISSN (Print)1548-3770

Other

Other60th Device Research Conference, DRC 2002
CountryUnited States
CitySanta Barbara
Period6/24/026/26/02

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Annealing
  • Crystallization
  • Fabrication
  • Grain boundaries
  • Immune system
  • Laboratories
  • Silicon on insulator technology
  • Statistics
  • Temperature
  • Thin film transistors

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  • Cite this

    Gu, J., Wu, W., & Chou, S. Y. (2002). High performance sub-100 nm Si thin-film transistors by Pattern-controlled crystallization of Thin channel layer and High temperature annealing. In 60th Device Research Conference, DRC 2002 (pp. 49-50). [1029501] (Device Research Conference - Conference Digest, DRC; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2002.1029501