High performance dual-mode operation asymmetric superlattice infrared photodetector using leaky electronic states

We use the leaky electronic state in the continuum concept to create a photovoltaic and photoconductive dual-mode operation superlattice infrared photodetector working at a temperature as high as room temperature. An asymmetric superlattice InGaAs/InAlAs is designed to virtually increase the material band offset and to create a localized state in the continuum with a preferential direction for electron extraction. These two characteristics are responsible for low dark current and high operating temperature of the device. At λ p = 4.1 μ m response peak, the highest specific detectivity is 5.7 × 10 10 Jones for + 5.0 V at 80 K, and at room temperature, it is 1.3 × 10 5 Jones for null bias.