High performance dual-mode operation asymmetric superlattice infrared photodetector using leaky electronic states

Pedro Henrique Pereira, Germano Maioli Penello, Mauricio Pamplona Pires, Deborah Sivco, Claire F. Gmachl, Patricia Lustoza Souza

Research output: Contribution to journalArticle

Abstract

We use the leaky electronic state in the continuum concept to create a photovoltaic and photoconductive dual-mode operation superlattice infrared photodetector working at a temperature as high as room temperature. An asymmetric superlattice InGaAs/InAlAs is designed to virtually increase the material band offset and to create a localized state in the continuum with a preferential direction for electron extraction. These two characteristics are responsible for low dark current and high operating temperature of the device. At λ p = 4.1 μ m response peak, the highest specific detectivity is 5.7 × 10 10 Jones for + 5.0 V at 80 K, and at room temperature, it is 1.3 × 10 5 Jones for null bias.

Original languageEnglish (US)
Article number204501
JournalJournal of Applied Physics
Volume125
Issue number20
DOIs
StatePublished - May 28 2019

Fingerprint

photometers
continuums
room temperature
dark current
operating temperature
electronics
electrons
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Pereira, Pedro Henrique ; Penello, Germano Maioli ; Pires, Mauricio Pamplona ; Sivco, Deborah ; Gmachl, Claire F. ; Souza, Patricia Lustoza. / High performance dual-mode operation asymmetric superlattice infrared photodetector using leaky electronic states. In: Journal of Applied Physics. 2019 ; Vol. 125, No. 20.
@article{8d12d4e23df34bf8a77ab6e3f89e062a,
title = "High performance dual-mode operation asymmetric superlattice infrared photodetector using leaky electronic states",
abstract = "We use the leaky electronic state in the continuum concept to create a photovoltaic and photoconductive dual-mode operation superlattice infrared photodetector working at a temperature as high as room temperature. An asymmetric superlattice InGaAs/InAlAs is designed to virtually increase the material band offset and to create a localized state in the continuum with a preferential direction for electron extraction. These two characteristics are responsible for low dark current and high operating temperature of the device. At λ p = 4.1 μ m response peak, the highest specific detectivity is 5.7 × 10 10 Jones for + 5.0 V at 80 K, and at room temperature, it is 1.3 × 10 5 Jones for null bias.",
author = "Pereira, {Pedro Henrique} and Penello, {Germano Maioli} and Pires, {Mauricio Pamplona} and Deborah Sivco and Gmachl, {Claire F.} and Souza, {Patricia Lustoza}",
year = "2019",
month = "5",
day = "28",
doi = "10.1063/1.5093242",
language = "English (US)",
volume = "125",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

High performance dual-mode operation asymmetric superlattice infrared photodetector using leaky electronic states. / Pereira, Pedro Henrique; Penello, Germano Maioli; Pires, Mauricio Pamplona; Sivco, Deborah; Gmachl, Claire F.; Souza, Patricia Lustoza.

In: Journal of Applied Physics, Vol. 125, No. 20, 204501, 28.05.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High performance dual-mode operation asymmetric superlattice infrared photodetector using leaky electronic states

AU - Pereira, Pedro Henrique

AU - Penello, Germano Maioli

AU - Pires, Mauricio Pamplona

AU - Sivco, Deborah

AU - Gmachl, Claire F.

AU - Souza, Patricia Lustoza

PY - 2019/5/28

Y1 - 2019/5/28

N2 - We use the leaky electronic state in the continuum concept to create a photovoltaic and photoconductive dual-mode operation superlattice infrared photodetector working at a temperature as high as room temperature. An asymmetric superlattice InGaAs/InAlAs is designed to virtually increase the material band offset and to create a localized state in the continuum with a preferential direction for electron extraction. These two characteristics are responsible for low dark current and high operating temperature of the device. At λ p = 4.1 μ m response peak, the highest specific detectivity is 5.7 × 10 10 Jones for + 5.0 V at 80 K, and at room temperature, it is 1.3 × 10 5 Jones for null bias.

AB - We use the leaky electronic state in the continuum concept to create a photovoltaic and photoconductive dual-mode operation superlattice infrared photodetector working at a temperature as high as room temperature. An asymmetric superlattice InGaAs/InAlAs is designed to virtually increase the material band offset and to create a localized state in the continuum with a preferential direction for electron extraction. These two characteristics are responsible for low dark current and high operating temperature of the device. At λ p = 4.1 μ m response peak, the highest specific detectivity is 5.7 × 10 10 Jones for + 5.0 V at 80 K, and at room temperature, it is 1.3 × 10 5 Jones for null bias.

UR - http://www.scopus.com/inward/record.url?scp=85066844146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066844146&partnerID=8YFLogxK

U2 - 10.1063/1.5093242

DO - 10.1063/1.5093242

M3 - Article

VL - 125

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 20

M1 - 204501

ER -