High-Order Sideband Generation in Semiconductors: Beyond the Three Step Model

Darren Valovcin; Hunter B. Banks; Shawn Mack; Art C. Gossard; Loren Pfeiffer; Mark S. Sherwin

High-Order Sideband Generation in Semiconductors: Beyond the Three Step Model

Darren Valovcin, Hunter B. Banks, Shawn Mack, Art C. Gossard, Loren Pfeiffer, Mark S. Sherwin

Research output: Contribution to journal › Conference article › peer-review

Abstract

Measurements of high-order sideband generation and absorption as a function of near-ir frequency in strong monochromatic sub-THz fields highlight opportunities to explore recollision physics in regimes that are difficult to access in atomic systems.

Original language	English (US)
Article number	JW2A.65
Journal	Optics InfoBase Conference Papers
State	Published - 2016
Externally published	Yes
Event	CLEO: Applications and Technology, CLEO AT 2016 - San Jose, United States Duration: Jun 5 2016 → Jun 10 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Cite this

@article{37483da8f58a4b90b5c6c6accbd58dfd,

title = "High-Order Sideband Generation in Semiconductors: Beyond the Three Step Model",

abstract = "Measurements of high-order sideband generation and absorption as a function of near-ir frequency in strong monochromatic sub-THz fields highlight opportunities to explore recollision physics in regimes that are difficult to access in atomic systems.",

author = "Darren Valovcin and Banks, {Hunter B.} and Shawn Mack and Gossard, {Art C.} and Loren Pfeiffer and Sherwin, {Mark S.}",

note = "Publisher Copyright: {\textcopyright} OSA 2016.; CLEO: Applications and Technology, CLEO AT 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

language = "English (US)",

journal = "Optics InfoBase Conference Papers",

issn = "2162-2701",

}

TY - JOUR

T1 - High-Order Sideband Generation in Semiconductors

T2 - CLEO: Applications and Technology, CLEO AT 2016

AU - Valovcin, Darren

AU - Banks, Hunter B.

AU - Mack, Shawn

AU - Gossard, Art C.

AU - Pfeiffer, Loren

AU - Sherwin, Mark S.

PY - 2016

Y1 - 2016

N2 - Measurements of high-order sideband generation and absorption as a function of near-ir frequency in strong monochromatic sub-THz fields highlight opportunities to explore recollision physics in regimes that are difficult to access in atomic systems.

AB - Measurements of high-order sideband generation and absorption as a function of near-ir frequency in strong monochromatic sub-THz fields highlight opportunities to explore recollision physics in regimes that are difficult to access in atomic systems.

UR - http://www.scopus.com/inward/record.url?scp=85136433612&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85136433612&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:85136433612

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - JW2A.65

Y2 - 5 June 2016 through 10 June 2016

ER -

High-Order Sideband Generation in Semiconductors: Beyond the Three Step Model

Abstract

All Science Journal Classification (ASJC) codes

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