High-order harmonic generation in disordered Semiconductors

Gianfranco Orlando, Chang Ming Wang, Tak San Ho, Shih I. Chu

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


We analyze high-order harmonic generation in a disordered semiconductor. The semiconductor is simulated through a one-dimensional two-band tight-binding Hamiltonian. We neglect both Coulomb interaction between electrons and electron-phonon interactions. The disorder is modeled using a site diagonal potential in the context of the Anderson model of disorder. We show that, when a moderate amount of disorder is present in the semiconductor, the resultant high-order harmonics spectra present clean peaks corresponding to odd harmonics of the frequency of the driving laser field. Our results suggest that disorder is a probable cause for the wellresolved high-harmonic generation spectra observed in experiments.

Original languageEnglish (US)
Pages (from-to)680-688
Number of pages9
JournalJournal of the Optical Society of America B: Optical Physics
Issue number4
StatePublished - Apr 1 2018

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics


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