High mobility nanocrystalline silicon transistors on clear plastic substrates

Alex Z. Kattamis; Russell J. Holmes; I. Chun Cheng; Ke Long; James C. Sturm; Stephen R. Forrest; Sigurd Wagner

doi:10.1109/LED.2005.861256

High mobility nanocrystalline silicon transistors on clear plastic substrates

Alex Z. Kattamis
, Russell J. Holmes
, I. Chun Cheng
, Ke Long
, James C. Sturm
, Stephen R. Forrest
, Sigurd Wagner

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm²V^-1s^-1 and transconductances of 0.22 μSμ^-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.

Original language	English (US)
Pages (from-to)	49-51
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	1
DOIs	https://doi.org/10.1109/LED.2005.861256
State	Published - Jan 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Clear plastic (CP) foil
Electrophosphorescence
Flexible substrate
Nanocrystalline silicon (nc-Si)
Organic light emitting device (OLED)
Thin-film transistor (TFT)

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10.1109/LED.2005.861256

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title = "High mobility nanocrystalline silicon transistors on clear plastic substrates",

abstract = "We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.",

keywords = "Clear plastic (CP) foil, Electrophosphorescence, Flexible substrate, Nanocrystalline silicon (nc-Si), Organic light emitting device (OLED), Thin-film transistor (TFT)",

author = "Kattamis, \{Alex Z.\} and Holmes, \{Russell J.\} and Cheng, \{I. Chun\} and Ke Long and Sturm, \{James C.\} and Forrest, \{Stephen R.\} and Sigurd Wagner",

note = "Funding Information: Manuscript received September 12, 2005; revised October 18, 2005. This work was supported in part by the New Jersey Commission on Science and Technology and the Universal Display Corporation, and in part by a Princeton Program in Plasma Science and Technology Graduate Fellowship. The review of this letter was arranged by Editor J. Sin.",

year = "2006",

month = jan,

doi = "10.1109/LED.2005.861256",

language = "English (US)",

volume = "27",

pages = "49--51",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - High mobility nanocrystalline silicon transistors on clear plastic substrates

AU - Kattamis, Alex Z.

AU - Holmes, Russell J.

AU - Cheng, I. Chun

AU - Long, Ke

AU - Sturm, James C.

AU - Forrest, Stephen R.

AU - Wagner, Sigurd

N1 - Funding Information: Manuscript received September 12, 2005; revised October 18, 2005. This work was supported in part by the New Jersey Commission on Science and Technology and the Universal Display Corporation, and in part by a Princeton Program in Plasma Science and Technology Graduate Fellowship. The review of this letter was arranged by Editor J. Sin.

PY - 2006/1

Y1 - 2006/1

N2 - We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.

AB - We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.

KW - Clear plastic (CP) foil

KW - Electrophosphorescence

KW - Flexible substrate

KW - Nanocrystalline silicon (nc-Si)

KW - Organic light emitting device (OLED)

KW - Thin-film transistor (TFT)

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U2 - 10.1109/LED.2005.861256

DO - 10.1109/LED.2005.861256

M3 - Article

AN - SCOPUS:33645527241

SN - 0741-3106

VL - 27

SP - 49

EP - 51

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -

High mobility nanocrystalline silicon transistors on clear plastic substrates

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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