High mobility nanocrystalline silicon transistors on clear plastic substrates

Alex Z. Kattamis, Russell J. Holmes, I. Chun Cheng, Ke Long, James C. Sturm, Stephen R. Forrest, Sigurd Wagner

Research output: Contribution to journalArticle

35 Scopus citations

Abstract

We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.

Original languageEnglish (US)
Pages (from-to)49-51
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number1
DOIs
StatePublished - Jan 1 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Keywords

  • Clear plastic (CP) foil
  • Electrophosphorescence
  • Flexible substrate
  • Nanocrystalline silicon (nc-Si)
  • Organic light emitting device (OLED)
  • Thin-film transistor (TFT)

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  • Cite this

    Kattamis, A. Z., Holmes, R. J., Cheng, I. C., Long, K., Sturm, J. C., Forrest, S. R., & Wagner, S. (2006). High mobility nanocrystalline silicon transistors on clear plastic substrates. IEEE Electron Device Letters, 27(1), 49-51. https://doi.org/10.1109/LED.2005.861256