High mobility nanocrystalline silicon transistors on clear plastic substrates

Alex Z. Kattamis; Russell J. Holmes; I. Chun Cheng; Ke Long; James C. Sturm; Stephen R. Forrest; Sigurd Wagner

doi:10.1109/LED.2005.861256

High mobility nanocrystalline silicon transistors on clear plastic substrates

Alex Z. Kattamis, Russell J. Holmes, I. Chun Cheng, Ke Long, James C. Sturm, Stephen R. Forrest, Sigurd Wagner

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm²V^-1s^-1 and transconductances of 0.22 μSμ^-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.

Original language	English (US)
Pages (from-to)	49-51
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	1
DOIs	https://doi.org/10.1109/LED.2005.861256
State	Published - Jan 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Clear plastic (CP) foil
Electrophosphorescence
Flexible substrate
Nanocrystalline silicon (nc-Si)
Organic light emitting device (OLED)
Thin-film transistor (TFT)

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10.1109/LED.2005.861256

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title = "High mobility nanocrystalline silicon transistors on clear plastic substrates",

abstract = "We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.",

keywords = "Clear plastic (CP) foil, Electrophosphorescence, Flexible substrate, Nanocrystalline silicon (nc-Si), Organic light emitting device (OLED), Thin-film transistor (TFT)",

author = "Kattamis, {Alex Z.} and Holmes, {Russell J.} and Cheng, {I. Chun} and Ke Long and Sturm, {James C.} and Forrest, {Stephen R.} and Sigurd Wagner",

note = "Funding Information: Manuscript received September 12, 2005; revised October 18, 2005. This work was supported in part by the New Jersey Commission on Science and Technology and the Universal Display Corporation, and in part by a Princeton Program in Plasma Science and Technology Graduate Fellowship. The review of this letter was arranged by Editor J. Sin.",

year = "2006",

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doi = "10.1109/LED.2005.861256",

language = "English (US)",

volume = "27",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Kattamis, Alex Z.

AU - Holmes, Russell J.

AU - Cheng, I. Chun

AU - Long, Ke

AU - Sturm, James C.

AU - Forrest, Stephen R.

AU - Wagner, Sigurd

N1 - Funding Information: Manuscript received September 12, 2005; revised October 18, 2005. This work was supported in part by the New Jersey Commission on Science and Technology and the Universal Display Corporation, and in part by a Princeton Program in Plasma Science and Technology Graduate Fellowship. The review of this letter was arranged by Editor J. Sin.

PY - 2006/1

Y1 - 2006/1

N2 - We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.

AB - We demonstrate nanocrystalline silicon (nc-Si) top-gate thin-film transistors (TFTs) on optically clear, flexible plastic foil substrates. The silicon layers were deposited by plasma-enhanced chemical vapor deposition at a substrate temperature of 150°C. The n-channel nc-Si TFTs have saturation electron mobilities of 18 cm2V-1s-1 and transconductances of 0.22 μSμ-1. With a channel width to length ratio of 2, these TFTs deliver up to 0.1 mA to bottom emitting electrophosphorescent organic light-emitting devices (OLEDs) which were fabricated on a separate glass substrate. These results suggest that high-current, small-area OLED driver TFTs can be made by a low-temperature process, compatible with flexible clear plastic substrates.

KW - Clear plastic (CP) foil

KW - Electrophosphorescence

KW - Flexible substrate

KW - Nanocrystalline silicon (nc-Si)

KW - Organic light emitting device (OLED)

KW - Thin-film transistor (TFT)

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High mobility nanocrystalline silicon transistors on clear plastic substrates

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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