High-mobility indirect excitons in wide single quantum well

C. J. Dorow, M. W. Hasling, D. J. Choksy, J. R. Leonard, L. V. Butov, K. W. West, L. N. Pfeiffer

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Indirect excitons (IXs) are bound pairs of electrons and holes confined in spatially separated layers. We present wide single quantum well (WSQW) heterostructures with high IX mobility, spectrally narrow IX emission, voltage-controllable IX energy, and long and voltage-controllable IX lifetime. This set of properties shows that WSQW heterostructures provide an advanced platform both for studying basic properties of IXs in low-disorder environments and for the development of high-mobility excitonic devices.

Original languageEnglish (US)
Article number212102
JournalApplied Physics Letters
Volume113
Issue number21
DOIs
StatePublished - Nov 19 2018
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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