High-mobility electrons in modulation-doped AlAs quantum wells

E. P. De Poortere, Y. P. Shkolnikov, M. Shayegan

Research output: Contribution to journalArticle

Abstract

We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m2/V s. Fractional quantum Hall states at first- and second-order filling factors, and up to ν = 11/3, are observed. Shubnikov-de Haas oscillations of high-density samples reveal that electrons occupy two X-point valleys.

Original languageEnglish (US)
Pages (from-to)646-648
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
DOIs
StatePublished - Mar 1 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Keywords

  • 2D electron system
  • Aluminum arsenide
  • Fractional quantum Hall effect

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