High-mobility electrons in modulation-doped AlAs quantum wells

E. P. De Poortere; Y. P. Shkolnikov; M. Shayegan

doi:10.1016/S1386-9477(02)00208-4

High-mobility electrons in modulation-doped AlAs quantum wells

E. P. De Poortere, Y. P. Shkolnikov, M. Shayegan

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m²/V s. Fractional quantum Hall states at first- and second-order filling factors, and up to ν = 11/3, are observed. Shubnikov-de Haas oscillations of high-density samples reveal that electrons occupy two X-point valleys.

Original language	English (US)
Pages (from-to)	646-648
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	13
Issue number	2-4
DOIs	https://doi.org/10.1016/S1386-9477(02)00208-4
State	Published - Mar 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

2D electron system
Aluminum arsenide
Fractional quantum Hall effect

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10.1016/S1386-9477(02)00208-4

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title = "High-mobility electrons in modulation-doped AlAs quantum wells",

abstract = "We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m2/V s. Fractional quantum Hall states at first- and second-order filling factors, and up to ν = 11/3, are observed. Shubnikov-de Haas oscillations of high-density samples reveal that electrons occupy two X-point valleys.",

keywords = "2D electron system, Aluminum arsenide, Fractional quantum Hall effect",

author = "{De Poortere}, {E. P.} and Shkolnikov, {Y. P.} and M. Shayegan",

note = "Funding Information: This work was supported by the NSF. M.S. also thanks the von Humboldt Foundation for support. We thank E. Palm and T. Murphy for their help with experiments performed at the Florida NHMFL, which is also supported by the NSF. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2002",

month = mar,

doi = "10.1016/S1386-9477(02)00208-4",

language = "English (US)",

volume = "13",

pages = "646--648",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2-4",

}

TY - JOUR

T1 - High-mobility electrons in modulation-doped AlAs quantum wells

AU - De Poortere, E. P.

AU - Shkolnikov, Y. P.

AU - Shayegan, M.

N1 - Funding Information: This work was supported by the NSF. M.S. also thanks the von Humboldt Foundation for support. We thank E. Palm and T. Murphy for their help with experiments performed at the Florida NHMFL, which is also supported by the NSF. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2002/3

Y1 - 2002/3

N2 - We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m2/V s. Fractional quantum Hall states at first- and second-order filling factors, and up to ν = 11/3, are observed. Shubnikov-de Haas oscillations of high-density samples reveal that electrons occupy two X-point valleys.

AB - We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m2/V s. Fractional quantum Hall states at first- and second-order filling factors, and up to ν = 11/3, are observed. Shubnikov-de Haas oscillations of high-density samples reveal that electrons occupy two X-point valleys.

KW - 2D electron system

KW - Aluminum arsenide

KW - Fractional quantum Hall effect

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U2 - 10.1016/S1386-9477(02)00208-4

DO - 10.1016/S1386-9477(02)00208-4

M3 - Article

AN - SCOPUS:0036492923

SN - 1386-9477

VL - 13

SP - 646

EP - 648

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

ER -

High-mobility electrons in modulation-doped AlAs quantum wells

Abstract

All Science Journal Classification (ASJC) codes

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