TY - JOUR
T1 - High mobility ambipolar charge transport in polyselenophene conjugated polymers
AU - Chen, Zhuoying
AU - Lemke, Henrik
AU - Albert-Seifried, Sebastian
AU - Caironi, Mario
AU - Nielsen, Martin Meedom
AU - Heeney, Martin
AU - Zhang, Weimin
AU - McCulloch, Iain
AU - Sirringhaus, Henning
PY - 2010/6/4
Y1 - 2010/6/4
N2 - (Figure Presented) High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm2 V-1 s-1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.
AB - (Figure Presented) High mobility ambipolor polymer field-effect transistors based on a series of regioregular polyselenophenes are presented together with their morphological and optical properties. Balanced electron and hole mobilities on the order of 0.03 cm2 V-1 s-1 are observed by employing a simple top-gate/bottom-contact configuration with photolithographically defined gold source/drain contacts. High gain complementary-like voltage inverters are demonstrated based on two identical ambipolar transistors.
UR - https://www.scopus.com/pages/publications/77953172044
UR - https://www.scopus.com/pages/publications/77953172044#tab=citedBy
U2 - 10.1002/adma.200903711
DO - 10.1002/adma.200903711
M3 - Article
C2 - 20352632
AN - SCOPUS:77953172044
SN - 0935-9648
VL - 22
SP - 2371
EP - 2375
JO - Advanced Materials
JF - Advanced Materials
IS - 21
ER -