Abstract
We report on the growth and transport properties of high-mobility two-dimensional electron gases (2DEGs) confined at the AlGaN/GaN interface grown by plasma-assisted molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy. We have grown samples over a broad range of electron densities ranging from ns = 6.9 × 1011 to 1.1 × 1013 cm-2, and at T=4.2 K, observe a peak mobility of 53 300 cm2/V s at a density of 2.8×1012 cm-2. Magnetotransport studies on these samples display exceptionally clean signatures of the quantum Hall effect. Our investigation of the dependence of 2DEG mobility on carrier concentration suggests that the low-temperature mobility in our AlGaN/GaN heterostructures is currently limited by the interplay between charged dislocation scattering and interface roughness.
Original language | English (US) |
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Pages (from-to) | 2888-2890 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 77 |
Issue number | 18 |
DOIs | |
State | Published - Oct 30 2000 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)