High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy

M. J. Manfra, L. N. Pfeiffer, K. W. West, H. L. Stormer, K. W. Baldwin, J. W.P. Hsu, D. V. Lang, R. J. Molnar

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103 Scopus citations

Abstract

We report on the growth and transport properties of high-mobility two-dimensional electron gases (2DEGs) confined at the AlGaN/GaN interface grown by plasma-assisted molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy. We have grown samples over a broad range of electron densities ranging from ns = 6.9 × 1011 to 1.1 × 1013 cm-2, and at T=4.2 K, observe a peak mobility of 53 300 cm2/V s at a density of 2.8×1012 cm-2. Magnetotransport studies on these samples display exceptionally clean signatures of the quantum Hall effect. Our investigation of the dependence of 2DEG mobility on carrier concentration suggests that the low-temperature mobility in our AlGaN/GaN heterostructures is currently limited by the interplay between charged dislocation scattering and interface roughness.

Original languageEnglish (US)
Pages (from-to)2888-2890
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number18
DOIs
StatePublished - Oct 30 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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