High-lifetime strained Si1-xGex films grown by rapid thermal chemical vapor deposition

J. C. Sturm, P. V. Schwartz, H. Manoharan, X. Xiao, Q. Mi

Research output: Contribution to journalArticle

Abstract

The electrical and optical properties of strained epitaxial Si1-x Gex films on silicon have been examined to determine the potential application of the material for integrated infrared sensors on silicon substrates. The generation lifetime in films grown by rapid thermal chemical vapor deposition was found to be in excess of 1 μs, which is important for the fabrication of sensors with high shunt impedances. By comparison of the well-resolved photoluminescence of these films with absorption data, it is also concluded that the initial absorption mechanism in these alloys proceeds by a no-phonon process, despite the fact that the films have an indirect bandgap.

Original languageEnglish (US)
Pages (from-to)29-32
Number of pages4
JournalSensors and Actuators: A. Physical
Volume33
Issue number1-2
DOIs
StatePublished - May 1992

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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