TY - JOUR
T1 - High-lifetime strained Si1-xGex films grown by rapid thermal chemical vapor deposition
AU - Sturm, J. C.
AU - Schwartz, P. V.
AU - Manoharan, H.
AU - Xiao, X.
AU - Mi, Q.
N1 - Funding Information:
The authors thank the M.L.W. Thewalt group of Simon Fraser University, Canada, and the Si MBE group of the National Research Council, Canada, for experimentala ssistanceT. he support of NSF, ONR, and the NJ Commissiono n Science and Technology is gratefully appreciated.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1992/5
Y1 - 1992/5
N2 - The electrical and optical properties of strained epitaxial Si1-x Gex films on silicon have been examined to determine the potential application of the material for integrated infrared sensors on silicon substrates. The generation lifetime in films grown by rapid thermal chemical vapor deposition was found to be in excess of 1 μs, which is important for the fabrication of sensors with high shunt impedances. By comparison of the well-resolved photoluminescence of these films with absorption data, it is also concluded that the initial absorption mechanism in these alloys proceeds by a no-phonon process, despite the fact that the films have an indirect bandgap.
AB - The electrical and optical properties of strained epitaxial Si1-x Gex films on silicon have been examined to determine the potential application of the material for integrated infrared sensors on silicon substrates. The generation lifetime in films grown by rapid thermal chemical vapor deposition was found to be in excess of 1 μs, which is important for the fabrication of sensors with high shunt impedances. By comparison of the well-resolved photoluminescence of these films with absorption data, it is also concluded that the initial absorption mechanism in these alloys proceeds by a no-phonon process, despite the fact that the films have an indirect bandgap.
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U2 - 10.1016/0924-4247(92)80220-W
DO - 10.1016/0924-4247(92)80220-W
M3 - Article
AN - SCOPUS:0026869906
SN - 0924-4247
VL - 33
SP - 29
EP - 32
JO - Sensors and Actuators: A. Physical
JF - Sensors and Actuators: A. Physical
IS - 1-2
ER -