High-lifetime strained Si1-xGex films grown by rapid thermal chemical vapor deposition

J. C. Sturm; P. V. Schwartz; H. Manoharan; X. Xiao; Q. Mi

doi:10.1016/0924-4247(92)80220-W

High-lifetime strained Si_1-xGe_x films grown by rapid thermal chemical vapor deposition

J. C. Sturm, P. V. Schwartz, H. Manoharan, X. Xiao, Q. Mi

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical and optical properties of strained epitaxial Si_1-x Ge_x films on silicon have been examined to determine the potential application of the material for integrated infrared sensors on silicon substrates. The generation lifetime in films grown by rapid thermal chemical vapor deposition was found to be in excess of 1 μs, which is important for the fabrication of sensors with high shunt impedances. By comparison of the well-resolved photoluminescence of these films with absorption data, it is also concluded that the initial absorption mechanism in these alloys proceeds by a no-phonon process, despite the fact that the films have an indirect bandgap.

Original language	English (US)
Pages (from-to)	29-32
Number of pages	4
Journal	Sensors and Actuators: A. Physical
Volume	33
Issue number	1-2
DOIs	https://doi.org/10.1016/0924-4247(92)80220-W
State	Published - May 1992

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/0924-4247(92)80220-W

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@article{68a6460b08d14bf191ca16e87d0d1193,

title = "High-lifetime strained Si1-xGex films grown by rapid thermal chemical vapor deposition",

abstract = "The electrical and optical properties of strained epitaxial Si1-x Gex films on silicon have been examined to determine the potential application of the material for integrated infrared sensors on silicon substrates. The generation lifetime in films grown by rapid thermal chemical vapor deposition was found to be in excess of 1 μs, which is important for the fabrication of sensors with high shunt impedances. By comparison of the well-resolved photoluminescence of these films with absorption data, it is also concluded that the initial absorption mechanism in these alloys proceeds by a no-phonon process, despite the fact that the films have an indirect bandgap.",

author = "Sturm, {J. C.} and Schwartz, {P. V.} and H. Manoharan and X. Xiao and Q. Mi",

note = "Funding Information: The authors thank the M.L.W. Thewalt group of Simon Fraser University, Canada, and the Si MBE group of the National Research Council, Canada, for experimentala ssistanceT. he support of NSF, ONR, and the NJ Commissiono n Science and Technology is gratefully appreciated. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1992",

month = may,

doi = "10.1016/0924-4247(92)80220-W",

language = "English (US)",

volume = "33",

pages = "29--32",

journal = "Sensors and Actuators: A. Physical",

issn = "0924-4247",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - High-lifetime strained Si1-xGex films grown by rapid thermal chemical vapor deposition

AU - Sturm, J. C.

AU - Schwartz, P. V.

AU - Manoharan, H.

AU - Xiao, X.

AU - Mi, Q.

N1 - Funding Information: The authors thank the M.L.W. Thewalt group of Simon Fraser University, Canada, and the Si MBE group of the National Research Council, Canada, for experimentala ssistanceT. he support of NSF, ONR, and the NJ Commissiono n Science and Technology is gratefully appreciated. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1992/5

Y1 - 1992/5

N2 - The electrical and optical properties of strained epitaxial Si1-x Gex films on silicon have been examined to determine the potential application of the material for integrated infrared sensors on silicon substrates. The generation lifetime in films grown by rapid thermal chemical vapor deposition was found to be in excess of 1 μs, which is important for the fabrication of sensors with high shunt impedances. By comparison of the well-resolved photoluminescence of these films with absorption data, it is also concluded that the initial absorption mechanism in these alloys proceeds by a no-phonon process, despite the fact that the films have an indirect bandgap.

AB - The electrical and optical properties of strained epitaxial Si1-x Gex films on silicon have been examined to determine the potential application of the material for integrated infrared sensors on silicon substrates. The generation lifetime in films grown by rapid thermal chemical vapor deposition was found to be in excess of 1 μs, which is important for the fabrication of sensors with high shunt impedances. By comparison of the well-resolved photoluminescence of these films with absorption data, it is also concluded that the initial absorption mechanism in these alloys proceeds by a no-phonon process, despite the fact that the films have an indirect bandgap.

UR - http://www.scopus.com/inward/record.url?scp=0026869906&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026869906&partnerID=8YFLogxK

U2 - 10.1016/0924-4247(92)80220-W

DO - 10.1016/0924-4247(92)80220-W

M3 - Article

AN - SCOPUS:0026869906

SN - 0924-4247

VL - 33

SP - 29

EP - 32

JO - Sensors and Actuators: A. Physical

JF - Sensors and Actuators: A. Physical

IS - 1-2

ER -

High-lifetime strained Si_1-xGe_x films grown by rapid thermal chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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