High hole mobility p-channel MOSFET's using MOS-gated Si/Si_1-xGe_x heterostructures

Engineering

• Heterostructures 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Low-Temperature 50%
• Room Temperature 50%
• Chemical Vapor Deposition 50%
• Vapor Deposition 50%
• Subthreshold Slope 50%
• Channel Structure 50%
• Mobility Enhancement 50%

Material Science

• Hole Mobility 100%
• Heterojunction 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Silicon 50%
• Thermal Chemical Vapor Deposition 50%

Keyphrases

• Buried Channel 50%