High hole mobility p-channel MOSFET's using MOS-gated Si/Si1-xGex heterostructures

J. C. Sturm; P. M. Garone; V. Venkataraman

doi:10.7567/ssdm.1991.pb4-6

High hole mobility p-channel MOSFET's using MOS-gated Si/Si_1-xGe_x heterostructures

J. C. Sturm
, P. M. Garone
, V. Venkataraman

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Through the use of strained Si_1-xGe_x buried-channel structures grown by Rapid Thermal Chemical Vapor Deposition, high mobility p-channel MOSFET's have been successfully fabricated and demonstrated. A room-temperature mobility enhancement of 50% and a low-temperature (90 K) enhancement of 100% have been observed compared to conventional all-silicon enhancement mode structures without any degradation in subthreshold slope.

Original language	English (US)
Pages	261-263
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1991.pb4-6
State	Published - 1991
Event	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: Aug 27 1991 → Aug 29 1991

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	8/27/91 → 8/29/91

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.7567/ssdm.1991.pb4-6

Cite this

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title = "High hole mobility p-channel MOSFET's using MOS-gated Si/Si1-xGex heterostructures",

abstract = "Through the use of strained Si1-xGex buried-channel structures grown by Rapid Thermal Chemical Vapor Deposition, high mobility p-channel MOSFET's have been successfully fabricated and demonstrated. A room-temperature mobility enhancement of 50\% and a low-temperature (90 K) enhancement of 100\% have been observed compared to conventional all-silicon enhancement mode structures without any degradation in subthreshold slope.",

author = "Sturm, \{J. C.\} and Garone, \{P. M.\} and V. Venkataraman",

year = "1991",

doi = "10.7567/ssdm.1991.pb4-6",

language = "English (US)",

pages = "261--263",

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AU - Sturm, J. C.

AU - Garone, P. M.

AU - Venkataraman, V.

PY - 1991

Y1 - 1991

N2 - Through the use of strained Si1-xGex buried-channel structures grown by Rapid Thermal Chemical Vapor Deposition, high mobility p-channel MOSFET's have been successfully fabricated and demonstrated. A room-temperature mobility enhancement of 50% and a low-temperature (90 K) enhancement of 100% have been observed compared to conventional all-silicon enhancement mode structures without any degradation in subthreshold slope.

AB - Through the use of strained Si1-xGex buried-channel structures grown by Rapid Thermal Chemical Vapor Deposition, high mobility p-channel MOSFET's have been successfully fabricated and demonstrated. A room-temperature mobility enhancement of 50% and a low-temperature (90 K) enhancement of 100% have been observed compared to conventional all-silicon enhancement mode structures without any degradation in subthreshold slope.

UR - https://www.scopus.com/pages/publications/0025901981

UR - https://www.scopus.com/pages/publications/0025901981#tab=citedBy

U2 - 10.7567/ssdm.1991.pb4-6

DO - 10.7567/ssdm.1991.pb4-6

M3 - Paper

AN - SCOPUS:0025901981

SP - 261

EP - 263

T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -