High hole mobility p-channel MOSFET's using MOS-gated Si/Si1-xGex heterostructures

J. C. Sturm, P. M. Garone, V. Venkataraman

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

Through the use of strained Si1-xGex buried-channel structures grown by Rapid Thermal Chemical Vapor Deposition, high mobility p-channel MOSFET's have been successfully fabricated and demonstrated. A room-temperature mobility enhancement of 50% and a low-temperature (90 K) enhancement of 100% have been observed compared to conventional all-silicon enhancement mode structures without any degradation in subthreshold slope.

Original languageEnglish (US)
Pages261-263
Number of pages3
DOIs
StatePublished - 1991
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: Aug 27 1991Aug 29 1991

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period8/27/918/29/91

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Sturm, J. C., Garone, P. M., & Venkataraman, V. (1991). High hole mobility p-channel MOSFET's using MOS-gated Si/Si1-xGex heterostructures. 261-263. Paper presented at 23rd International Conference on Solid State Devices and Materials - SSDM '91, Yokohama, Jpn, . https://doi.org/10.7567/ssdm.1991.pb4-6