High growth rate of epitaxial silicon-carbon alloys by high-order silane precursor and chemical vapor deposition

K. H. Chung, J. C. Sturm, E. Sanchez, S. Kuppurao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
PublisherIEEE Computer Society
ISBN (Print)1424404614, 9781424404612
DOIs
StatePublished - Jan 1 2006
EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
Duration: May 15 2006May 17 2006

Publication series

NameThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume2006

Other

OtherThird International SiGe Technology and Device Meeting, ISTDM 2006
CountryUnited States
CityPrinceton, NJ
Period5/15/065/17/06

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Chung, K. H., Sturm, J. C., Sanchez, E., & Kuppurao, S. (2006). High growth rate of epitaxial silicon-carbon alloys by high-order silane precursor and chemical vapor deposition. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest [1716017] (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006). IEEE Computer Society. https://doi.org/10.1109/istdm.2006.246523