High growth rate of epitaxial silicon-carbon alloys by high-order silane precursor and chemical vapor deposition

K. H. Chung, J. C. Sturm, E. Sanchez, S. Kuppurao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
PublisherIEEE Computer Society
ISBN (Print)1424404614, 9781424404612
DOIs
StatePublished - 2006
EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
Duration: May 15 2006May 17 2006

Publication series

NameThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume2006

Other

OtherThird International SiGe Technology and Device Meeting, ISTDM 2006
Country/TerritoryUnited States
CityPrinceton, NJ
Period5/15/065/17/06

All Science Journal Classification (ASJC) codes

  • General Computer Science
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'High growth rate of epitaxial silicon-carbon alloys by high-order silane precursor and chemical vapor deposition'. Together they form a unique fingerprint.

Cite this