@inproceedings{608e02abe4864314aecc3eab4baf5e46,
title = "High growth rate of epitaxial silicon-carbon alloys by high-order silane precursor and chemical vapor deposition",
author = "Chung, {K. H.} and Sturm, {J. C.} and E. Sanchez and S. Kuppurao",
year = "2006",
doi = "10.1109/istdm.2006.246523",
language = "English (US)",
isbn = "1424404614",
series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",
publisher = "IEEE Computer Society",
booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",
address = "United States",
note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",
}