High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation

Haizhou Yin; K. D. Hobart; F. J. Kub; S. R. Shieh; T. S. Duffy; J. C. Sturm

doi:10.1063/1.1738514

High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation

Haizhou Yin, K. D. Hobart, F. J. Kub, S. R. Shieh, T. S. Duffy, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

High quality relaxed SiGe on oxide with high germanium content up to 57% was fabricated by combining SiGe oxidation and and use of SiGe layers on insulating borophosporosilicate glass (BPSG) substrates. Pure silicon dioxide on the top and increased germanium content in the Si _1-xGe _x layer was obtained by dry oxidation, after the SiGe islands were formed on BPSG by layer transfer. It was observed that by depositing a silicon dioxide capping layer before oxidation, the surface roughening and the nonuniformity of the enhanced germanium content during SiGe oxidation were improved. It was also found that the strain arised from the increase of germanium content was relaxed by lateral expansion of SiGe islands.

Original language	English (US)
Pages (from-to)	3624-3626
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	18
DOIs	https://doi.org/10.1063/1.1738514
State	Published - May 3 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1738514

Cite this

@article{fa8900c11dc1480cae0f95cb91f948c2,

title = "High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation",

abstract = "High quality relaxed SiGe on oxide with high germanium content up to 57% was fabricated by combining SiGe oxidation and and use of SiGe layers on insulating borophosporosilicate glass (BPSG) substrates. Pure silicon dioxide on the top and increased germanium content in the Si 1-xGe x layer was obtained by dry oxidation, after the SiGe islands were formed on BPSG by layer transfer. It was observed that by depositing a silicon dioxide capping layer before oxidation, the surface roughening and the nonuniformity of the enhanced germanium content during SiGe oxidation were improved. It was also found that the strain arised from the increase of germanium content was relaxed by lateral expansion of SiGe islands.",

author = "Haizhou Yin and Hobart, {K. D.} and Kub, {F. J.} and Shieh, {S. R.} and Duffy, {T. S.} and Sturm, {J. C.}",

year = "2004",

month = may,

day = "3",

doi = "10.1063/1.1738514",

language = "English (US)",

volume = "84",

pages = "3624--3626",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation

AU - Yin, Haizhou

AU - Hobart, K. D.

AU - Kub, F. J.

AU - Shieh, S. R.

AU - Duffy, T. S.

AU - Sturm, J. C.

PY - 2004/5/3

Y1 - 2004/5/3

N2 - High quality relaxed SiGe on oxide with high germanium content up to 57% was fabricated by combining SiGe oxidation and and use of SiGe layers on insulating borophosporosilicate glass (BPSG) substrates. Pure silicon dioxide on the top and increased germanium content in the Si 1-xGe x layer was obtained by dry oxidation, after the SiGe islands were formed on BPSG by layer transfer. It was observed that by depositing a silicon dioxide capping layer before oxidation, the surface roughening and the nonuniformity of the enhanced germanium content during SiGe oxidation were improved. It was also found that the strain arised from the increase of germanium content was relaxed by lateral expansion of SiGe islands.

AB - High quality relaxed SiGe on oxide with high germanium content up to 57% was fabricated by combining SiGe oxidation and and use of SiGe layers on insulating borophosporosilicate glass (BPSG) substrates. Pure silicon dioxide on the top and increased germanium content in the Si 1-xGe x layer was obtained by dry oxidation, after the SiGe islands were formed on BPSG by layer transfer. It was observed that by depositing a silicon dioxide capping layer before oxidation, the surface roughening and the nonuniformity of the enhanced germanium content during SiGe oxidation were improved. It was also found that the strain arised from the increase of germanium content was relaxed by lateral expansion of SiGe islands.

UR - http://www.scopus.com/inward/record.url?scp=2542458471&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2542458471&partnerID=8YFLogxK

U2 - 10.1063/1.1738514

DO - 10.1063/1.1738514

M3 - Article

AN - SCOPUS:2542458471

SN - 0003-6951

VL - 84

SP - 3624

EP - 3626

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this