High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation

Haizhou Yin, K. D. Hobart, F. J. Kub, S. R. Shieh, T. S. Duffy, J. C. Sturm

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

High quality relaxed SiGe on oxide with high germanium content up to 57% was fabricated by combining SiGe oxidation and and use of SiGe layers on insulating borophosporosilicate glass (BPSG) substrates. Pure silicon dioxide on the top and increased germanium content in the Si 1-xGe x layer was obtained by dry oxidation, after the SiGe islands were formed on BPSG by layer transfer. It was observed that by depositing a silicon dioxide capping layer before oxidation, the surface roughening and the nonuniformity of the enhanced germanium content during SiGe oxidation were improved. It was also found that the strain arised from the increase of germanium content was relaxed by lateral expansion of SiGe islands.

Original languageEnglish (US)
Pages (from-to)3624-3626
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - May 3 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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