High-frequency ZnO schottky diodes for non-contact inductive power transfer in large-area electronics

Levent E. Aygun; Sigurd Wagner; Naveen Verma; James C. Sturm

doi:10.1109/DRC.2017.7999462

High-frequency ZnO schottky diodes for non-contact inductive power transfer in large-area electronics

Levent E. Aygun, Sigurd Wagner, Naveen Verma, James C. Sturm

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Besides traditional RFID [1], an emerging application of large-area electronics is hybrid systems [2], where we need to transfer power and signals from one flexible sheet to another. This is driven by manufacturing considerations: sheets providing different functionality, via different materials and devices, can simply be laminated together. Hard-wired metallurgical bonds between flexible sheets are expected to be problematic, especially for reliability, motivating the use of non-contact inductively-coupled interfaces between adjacent sheets [2-3]. For efficiency of such interfaces, high-frequency thin-film diodes (HF-TFDs) are required, since inductive losses are lower at high frequencies [3].

Original language	English (US)
Title of host publication	75th Annual Device Research Conference, DRC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509063277
DOIs	https://doi.org/10.1109/DRC.2017.7999462
State	Published - Aug 1 2017
Event	75th Annual Device Research Conference, DRC 2017 - South Bend, United States Duration: Jun 25 2017 → Jun 28 2017

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	75th Annual Device Research Conference, DRC 2017
Country/Territory	United States
City	South Bend
Period	6/25/17 → 6/28/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/DRC.2017.7999462

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Aygun, L. E., Wagner, S., Verma, N., & Sturm, J. C. (2017). High-frequency ZnO schottky diodes for non-contact inductive power transfer in large-area electronics. In 75th Annual Device Research Conference, DRC 2017 Article 7999462 (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2017.7999462

@inproceedings{b356a309858740f2852d67f388eed438,

title = "High-frequency ZnO schottky diodes for non-contact inductive power transfer in large-area electronics",

abstract = "Besides traditional RFID [1], an emerging application of large-area electronics is hybrid systems [2], where we need to transfer power and signals from one flexible sheet to another. This is driven by manufacturing considerations: sheets providing different functionality, via different materials and devices, can simply be laminated together. Hard-wired metallurgical bonds between flexible sheets are expected to be problematic, especially for reliability, motivating the use of non-contact inductively-coupled interfaces between adjacent sheets [2-3]. For efficiency of such interfaces, high-frequency thin-film diodes (HF-TFDs) are required, since inductive losses are lower at high frequencies [3].",

author = "Aygun, {Levent E.} and Sigurd Wagner and Naveen Verma and Sturm, {James C.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 75th Annual Device Research Conference, DRC 2017 ; Conference date: 25-06-2017 Through 28-06-2017",

year = "2017",

month = aug,

day = "1",

doi = "10.1109/DRC.2017.7999462",

language = "English (US)",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Aygun, LE, Wagner, S, Verma, N & Sturm, JC 2017, High-frequency ZnO schottky diodes for non-contact inductive power transfer in large-area electronics. in 75th Annual Device Research Conference, DRC 2017., 7999462, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., 75th Annual Device Research Conference, DRC 2017, South Bend, United States, 6/25/17. https://doi.org/10.1109/DRC.2017.7999462

High-frequency ZnO schottky diodes for non-contact inductive power transfer in large-area electronics. / Aygun, Levent E.; Wagner, Sigurd; Verma, Naveen et al.
75th Annual Device Research Conference, DRC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7999462 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High-frequency ZnO schottky diodes for non-contact inductive power transfer in large-area electronics

AU - Aygun, Levent E.

AU - Wagner, Sigurd

AU - Verma, Naveen

AU - Sturm, James C.

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Besides traditional RFID [1], an emerging application of large-area electronics is hybrid systems [2], where we need to transfer power and signals from one flexible sheet to another. This is driven by manufacturing considerations: sheets providing different functionality, via different materials and devices, can simply be laminated together. Hard-wired metallurgical bonds between flexible sheets are expected to be problematic, especially for reliability, motivating the use of non-contact inductively-coupled interfaces between adjacent sheets [2-3]. For efficiency of such interfaces, high-frequency thin-film diodes (HF-TFDs) are required, since inductive losses are lower at high frequencies [3].

AB - Besides traditional RFID [1], an emerging application of large-area electronics is hybrid systems [2], where we need to transfer power and signals from one flexible sheet to another. This is driven by manufacturing considerations: sheets providing different functionality, via different materials and devices, can simply be laminated together. Hard-wired metallurgical bonds between flexible sheets are expected to be problematic, especially for reliability, motivating the use of non-contact inductively-coupled interfaces between adjacent sheets [2-3]. For efficiency of such interfaces, high-frequency thin-film diodes (HF-TFDs) are required, since inductive losses are lower at high frequencies [3].

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DO - 10.1109/DRC.2017.7999462

M3 - Conference contribution

AN - SCOPUS:85028080922

T3 - Device Research Conference - Conference Digest, DRC

BT - 75th Annual Device Research Conference, DRC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 75th Annual Device Research Conference, DRC 2017

Y2 - 25 June 2017 through 28 June 2017

ER -

High-frequency ZnO schottky diodes for non-contact inductive power transfer in large-area electronics

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