Abstract
We have realized by cleaved edge overgrowth a two-dimensional electron gas system in a one-dimensional lateral superlattice consisting of 100 periods of 120 Å GaAs/20 Å AlGaAs. These devices exhibit nonlinear I-V, including negative differential resistance, at high electric fields. We demonstrate, by monitoring the changes in the two-dimensional electron density, that the nonlinear I-V is due to high field induced electron trapping.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 323 |
| Number of pages | 1 |
| Journal | Applied Physics Letters |
| DOIs | |
| State | Published - 1995 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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