High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques

S. Madhavi, V. Venkataraman, C. W. Liu, J. C. Sturm

Research output: Contribution to conferencePaper

Abstract

Recently, Si / SiGe n- MODFETs with transconductances exceeding 300 mS/mm at 300K and 600 mS/mm at 77K have been demonstrated by many groups. Accurate modeling of these short channel devices (L < 1μm) requires knowledge of hot electron drift velocities as a function of the electric field. This paper presents the first experimental determination of the high field drift velocity of 2DEG in Si/SiGe n-type modulation doped structures at 10K and 77K for fields varying from 0.1 V/cm to 3000 V/cm by magnetoresistance measurements.

Original languageEnglish (US)
Pages26-27
Number of pages2
StatePublished - Jan 1 1996
Externally publishedYes
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Madhavi, S., Venkataraman, V., Liu, C. W., & Sturm, J. C. (1996). High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques. 26-27. Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .