High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques

S. Madhavi; V. Venkataraman; C. W. Liu; J. C. Sturm

High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques

S. Madhavi, V. Venkataraman, C. W. Liu, J. C. Sturm

Research output: Contribution to conference › Paper › peer-review

Abstract

Recently, Si / SiGe n- MODFETs with transconductances exceeding 300 mS/mm at 300K and 600 mS/mm at 77K have been demonstrated by many groups. Accurate modeling of these short channel devices (L < 1μm) requires knowledge of hot electron drift velocities as a function of the electric field. This paper presents the first experimental determination of the high field drift velocity of 2DEG in Si/SiGe n-type modulation doped structures at 10K and 77K for fields varying from 0.1 V/cm to 3000 V/cm by magnetoresistance measurements.

Original language	English (US)
Pages	26-27
Number of pages	2
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA Duration: Jun 24 1996 → Jun 26 1996

Other

Other	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC
City	Santa Barbara, CA, USA
Period	6/24/96 → 6/26/96

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{1516101ed8124c4ebdfce76bcb461fe0,

title = "High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques",

abstract = "Recently, Si / SiGe n- MODFETs with transconductances exceeding 300 mS/mm at 300K and 600 mS/mm at 77K have been demonstrated by many groups. Accurate modeling of these short channel devices (L < 1μm) requires knowledge of hot electron drift velocities as a function of the electric field. This paper presents the first experimental determination of the high field drift velocity of 2DEG in Si/SiGe n-type modulation doped structures at 10K and 77K for fields varying from 0.1 V/cm to 3000 V/cm by magnetoresistance measurements.",

author = "S. Madhavi and V. Venkataraman and Liu, {C. W.} and Sturm, {J. C.}",

year = "1996",

language = "English (US)",

pages = "26--27",

note = "Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC ; Conference date: 24-06-1996 Through 26-06-1996",

}

TY - CONF

T1 - High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques

AU - Madhavi, S.

AU - Venkataraman, V.

AU - Liu, C. W.

AU - Sturm, J. C.

PY - 1996

Y1 - 1996

N2 - Recently, Si / SiGe n- MODFETs with transconductances exceeding 300 mS/mm at 300K and 600 mS/mm at 77K have been demonstrated by many groups. Accurate modeling of these short channel devices (L < 1μm) requires knowledge of hot electron drift velocities as a function of the electric field. This paper presents the first experimental determination of the high field drift velocity of 2DEG in Si/SiGe n-type modulation doped structures at 10K and 77K for fields varying from 0.1 V/cm to 3000 V/cm by magnetoresistance measurements.

AB - Recently, Si / SiGe n- MODFETs with transconductances exceeding 300 mS/mm at 300K and 600 mS/mm at 77K have been demonstrated by many groups. Accurate modeling of these short channel devices (L < 1μm) requires knowledge of hot electron drift velocities as a function of the electric field. This paper presents the first experimental determination of the high field drift velocity of 2DEG in Si/SiGe n-type modulation doped structures at 10K and 77K for fields varying from 0.1 V/cm to 3000 V/cm by magnetoresistance measurements.

UR - http://www.scopus.com/inward/record.url?scp=0029703418&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029703418&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029703418

SP - 26

EP - 27

T2 - Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC

Y2 - 24 June 1996 through 26 June 1996

ER -

High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques

Abstract

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All Science Journal Classification (ASJC) codes

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