High-fidelity quantum gates in Si/SiGe double quantum dots

Maximilian Russ, D. M. Zajac, A. J. Sigillito, F. Borjans, J. M. Taylor, J. R. Petta, Guido Burkard

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Motivated by recent experiments of Zajac et al. [Science 359, 439 (2018)10.1126/science.aao5965], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.

Original languageEnglish (US)
Article number085421
JournalPhysical Review B
Volume97
Issue number8
DOIs
StatePublished - Feb 15 2018

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Russ, M., Zajac, D. M., Sigillito, A. J., Borjans, F., Taylor, J. M., Petta, J. R., & Burkard, G. (2018). High-fidelity quantum gates in Si/SiGe double quantum dots. Physical Review B, 97(8), [085421]. https://doi.org/10.1103/PhysRevB.97.085421