TY - GEN
T1 - High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation
AU - Huang, Chiao Ti
AU - Li, Jiun Yun
AU - Sturm, James Christopher
PY - 2012/7/30
Y1 - 2012/7/30
N2 - Quantum dot devices in the Si/SiGe material system are a promising candidate to implement quantum computation due to the weak nature of its nuclear spin. A Schottky split-gate on a Si/SiGe modulation-doped two-dimensional electron gas (2DEG) with negative biases has become a common way to define lateral quantum dot arrays. However, the severe leakage through the Schottky gate caused by the phosphorus surface segregation from the intentionally doped electron supply layer degrades the reliability of split gate technique. In this study, we demonstrate a large reduction in gate leakage by the suppression of phosphorus surface segregation during sample growth.
AB - Quantum dot devices in the Si/SiGe material system are a promising candidate to implement quantum computation due to the weak nature of its nuclear spin. A Schottky split-gate on a Si/SiGe modulation-doped two-dimensional electron gas (2DEG) with negative biases has become a common way to define lateral quantum dot arrays. However, the severe leakage through the Schottky gate caused by the phosphorus surface segregation from the intentionally doped electron supply layer degrades the reliability of split gate technique. In this study, we demonstrate a large reduction in gate leakage by the suppression of phosphorus surface segregation during sample growth.
UR - http://www.scopus.com/inward/record.url?scp=84864265333&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864265333&partnerID=8YFLogxK
U2 - 10.1109/ISTDM.2012.6222514
DO - 10.1109/ISTDM.2012.6222514
M3 - Conference contribution
AN - SCOPUS:84864265333
SN - 9781457718625
T3 - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
SP - 170
EP - 171
BT - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
T2 - 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Y2 - 4 June 2012 through 6 June 2012
ER -