High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation

Chiao Ti Huang, Jiun Yun Li, James Christopher Sturm

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quantum dot devices in the Si/SiGe material system are a promising candidate to implement quantum computation due to the weak nature of its nuclear spin. A Schottky split-gate on a Si/SiGe modulation-doped two-dimensional electron gas (2DEG) with negative biases has become a common way to define lateral quantum dot arrays. However, the severe leakage through the Schottky gate caused by the phosphorus surface segregation from the intentionally doped electron supply layer degrades the reliability of split gate technique. In this study, we demonstrate a large reduction in gate leakage by the suppression of phosphorus surface segregation during sample growth.

Original languageEnglish (US)
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages170-171
Number of pages2
DOIs
StatePublished - Jul 30 2012
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: Jun 4 2012Jun 6 2012

Publication series

Name2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period6/4/126/6/12

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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