Heteroepitaxial growth of Ba0.5Sr0.5TiO3/SrRuO3 on YSZ/Si by off-axis sputtering

S. Y. Hou, J. Kwo, R. K. Watts, J. Y. Cheng, R. J. Cava, W. F. Peck, D. K. Fork

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations


We demonstrate an epitaxial heterostructure of Ba0.5Sr0.5TiO3/SrRuO3/YSZ on Si for potential charge storage applications. The dielectric Ba0.5Sr0.5TiO3 (BST) and conductive oxide SrRuO3 are both grown (110) oriented on YSZ (100) buffered Si by 90° off-axis sputtering. These films showed a high degree of crystallinity with minimal interdiffusion at the interfaces as examined by X-ray diffraction, Rutherford backscattering spectroscopy, and cross-section transmission electron microscopy. The in-plane epitaxial alignment of the films is BST/SRO 〈111〉 // YSZ 〈110〉 with a four-fold degeneracy. The dielectric constant and loss tangent of the epi-BST films are 360 and 0.01 at 10 kHz. The leakage current density is <4×10-7 A/cm2 at 1 V. The room temperature dielectric constant (ε) of the BST films shows a roll-off in the 1-10 MHz range. This is attributed to the existence of a series resistance in the measurement circuit, which likely arises from the SrRuO3 electrode.

Original languageEnglish (US)
Pages (from-to)99-104
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Dec 1 1994

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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