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Hardmask charging during Cl
2
plasma etching of silicon
M. A. Vyvoda
, M. Li
,
D. B. Graves
Research output
:
Contribution to journal
›
Article
›
peer-review
21
Scopus citations
Overview
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Dive into the research topics of 'Hardmask charging during Cl
2
plasma etching of silicon'. Together they form a unique fingerprint.
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Engineering
Dielectrics
100%
Simulation Result
33%
Accurate Prediction
33%
Experimental Work
33%
Scale Model
33%
Crystalline Silicon
33%
Micrograph
33%
Theoretical Work
33%
Gate Dielectric
33%
Material Science
Silicon
100%
Plasma Etching
100%
Dielectric Material
75%
Density
25%
Crystalline Material
25%
Physics
Plasma Etching
100%
Dielectrics
75%
Ion Current
50%
Scale Model
25%
Keyphrases
High Density Plasma Etching
33%
Feature Scale Model
33%
Dielectric Charging
33%
Gate Dielectric Material
33%
Trajectory Deflection
33%