Hall resistance of the reentrant insulating phase around the 1/5 fractional quantum hall liquid

T. Sajoto, Y. P. Li, L. W. Engel, D. C. Tsui, Mansour Shayegan

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

We report a systematic study of the low-temperature Hall resistance ρxy in the reentrant insulating phase (IP) around the 1/5 fractional quantum Hall (FQH) liquid. At filling factors ν=1/5 and ν=2/9, ρxy=5h/e2 down to 22 mK and ρxy=9h/2e2 down to 40 mK, respectively. In the reentrant IP for ν>1/5, and for ν<1/5 near the 1/5 FQH liquid, ρxy is normal (=B/ne) and independent of T. Our experimental findings directly imply that σxx→0 and σxy→0, but ρxy→B/ne as T→0 in these IP regions. We discuss implications of the findings with regard to the various theoretically proposed ground states for the IP.

Original languageEnglish (US)
Pages (from-to)2321-2324
Number of pages4
JournalPhysical review letters
Volume70
Issue number15
DOIs
StatePublished - Jan 1 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Hall resistance of the reentrant insulating phase around the 1/5 fractional quantum hall liquid'. Together they form a unique fingerprint.

  • Cite this