Growth pressure effects on Si/Si1-xGex chemical vapor deposition

Z. Matutinović-Krstelj; E. Chason; J. C. Sturm

doi:10.1007/BF02659731

Growth pressure effects on Si/Si_1-xGe_x chemical vapor deposition

Z. Matutinović-Krstelj
, E. Chason
, J. C. Sturm

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We studied the effects of growth pressure on Si_1-xGe_x/Si heterostructures grown by rapid thermal chemical vapor deposition in the pressure range of 6-220 Torr. The material was characterized by photoluminescence (PL), x-ray reflectivity, and electrical measurements on resonant tunneling diodes (RTDs). High quality material was demonstrated throughout the pressure range, but a weaker PL intensity at higher pressure (220 Torr) indicates lower lifetimes. Interface abruptness was degraded at higher pressures due to gas transients. This was confirmed by x-ray reflectivity measurements and the performance of RTDs. We have established a low pressure limit to interface roughness of 0.2-0.5 nm, determined by x-ray reflectivity.

Original language	English (US)
Pages (from-to)	725-730
Number of pages	6
Journal	Journal of Electronic Materials
Volume	24
Issue number	6
DOIs	https://doi.org/10.1007/BF02659731
State	Published - Jun 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Growth pressure effects
Si/SiGe
rapid thermal chemical deposition

Access to Document

10.1007/BF02659731

Cite this

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title = "Growth pressure effects on Si/Si1-xGex chemical vapor deposition",

abstract = "We studied the effects of growth pressure on Si1-xGex/Si heterostructures grown by rapid thermal chemical vapor deposition in the pressure range of 6-220 Torr. The material was characterized by photoluminescence (PL), x-ray reflectivity, and electrical measurements on resonant tunneling diodes (RTDs). High quality material was demonstrated throughout the pressure range, but a weaker PL intensity at higher pressure (220 Torr) indicates lower lifetimes. Interface abruptness was degraded at higher pressures due to gas transients. This was confirmed by x-ray reflectivity measurements and the performance of RTDs. We have established a low pressure limit to interface roughness of 0.2-0.5 nm, determined by x-ray reflectivity.",

keywords = "Growth pressure effects, Si/SiGe, rapid thermal chemical deposition",

author = "Z. Matutinovi{\'c}-Krstelj and E. Chason and Sturm, \{J. C.\}",

year = "1995",

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doi = "10.1007/BF02659731",

language = "English (US)",

volume = "24",

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journal = "Journal of Electronic Materials",

issn = "0361-5235",

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T1 - Growth pressure effects on Si/Si1-xGex chemical vapor deposition

AU - Matutinović-Krstelj, Z.

AU - Chason, E.

AU - Sturm, J. C.

PY - 1995/6

Y1 - 1995/6

N2 - We studied the effects of growth pressure on Si1-xGex/Si heterostructures grown by rapid thermal chemical vapor deposition in the pressure range of 6-220 Torr. The material was characterized by photoluminescence (PL), x-ray reflectivity, and electrical measurements on resonant tunneling diodes (RTDs). High quality material was demonstrated throughout the pressure range, but a weaker PL intensity at higher pressure (220 Torr) indicates lower lifetimes. Interface abruptness was degraded at higher pressures due to gas transients. This was confirmed by x-ray reflectivity measurements and the performance of RTDs. We have established a low pressure limit to interface roughness of 0.2-0.5 nm, determined by x-ray reflectivity.

AB - We studied the effects of growth pressure on Si1-xGex/Si heterostructures grown by rapid thermal chemical vapor deposition in the pressure range of 6-220 Torr. The material was characterized by photoluminescence (PL), x-ray reflectivity, and electrical measurements on resonant tunneling diodes (RTDs). High quality material was demonstrated throughout the pressure range, but a weaker PL intensity at higher pressure (220 Torr) indicates lower lifetimes. Interface abruptness was degraded at higher pressures due to gas transients. This was confirmed by x-ray reflectivity measurements and the performance of RTDs. We have established a low pressure limit to interface roughness of 0.2-0.5 nm, determined by x-ray reflectivity.

KW - Growth pressure effects

KW - Si/SiGe

KW - rapid thermal chemical deposition

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