Abstract
We studied the effects of growth pressure on Si1-xGex/Si heterostructures grown by rapid thermal chemical vapor deposition in the pressure range of 6-220 Torr. The material was characterized by photoluminescence (PL), x-ray reflectivity, and electrical measurements on resonant tunneling diodes (RTDs). High quality material was demonstrated throughout the pressure range, but a weaker PL intensity at higher pressure (220 Torr) indicates lower lifetimes. Interface abruptness was degraded at higher pressures due to gas transients. This was confirmed by x-ray reflectivity measurements and the performance of RTDs. We have established a low pressure limit to interface roughness of 0.2-0.5 nm, determined by x-ray reflectivity.
Original language | English (US) |
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Pages (from-to) | 725-730 |
Number of pages | 6 |
Journal | Journal of Electronic Materials |
Volume | 24 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1995 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Keywords
- Growth pressure effects
- Si/SiGe
- rapid thermal chemical deposition