Growth pressure effects on Si/Si1-xGex chemical vapor deposition

Z. Matutinović-Krstelj, E. Chason, J. C. Sturm

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8 Scopus citations

Abstract

We studied the effects of growth pressure on Si1-xGex/Si heterostructures grown by rapid thermal chemical vapor deposition in the pressure range of 6-220 Torr. The material was characterized by photoluminescence (PL), x-ray reflectivity, and electrical measurements on resonant tunneling diodes (RTDs). High quality material was demonstrated throughout the pressure range, but a weaker PL intensity at higher pressure (220 Torr) indicates lower lifetimes. Interface abruptness was degraded at higher pressures due to gas transients. This was confirmed by x-ray reflectivity measurements and the performance of RTDs. We have established a low pressure limit to interface roughness of 0.2-0.5 nm, determined by x-ray reflectivity.

Original languageEnglish (US)
Pages (from-to)725-730
Number of pages6
JournalJournal of Electronic Materials
Volume24
Issue number6
DOIs
StatePublished - Jun 1 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Growth pressure effects
  • Si/SiGe
  • rapid thermal chemical deposition

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