Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

W. Zheng, James Christopher Sturm, Claire F. Gmachl, T. Buyuklimanli, J. Marino, M. S. Denker, J. T. Mayer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
Original languageEnglish (US)
Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
PublisherIEEE Computer Society
ISBN (Print)1424404614, 9781424404612
DOIs
StatePublished - 2006
EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
Duration: May 15 2006May 17 2006

Publication series

NameThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume2006

Other

OtherThird International SiGe Technology and Device Meeting, ISTDM 2006
CountryUnited States
CityPrinceton, NJ
Period5/15/065/17/06

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Zheng, W., Sturm, J. C., Gmachl, C. F., Buyuklimanli, T., Marino, J., Denker, M. S., & Mayer, J. T. (2006). Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest [1715996] (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006). IEEE Computer Society. https://doi.org/10.1109/istdm.2006.246502