Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

W. Zheng; James Christopher Sturm; Claire F. Gmachl; T. Buyuklimanli; J. Marino; M. S. Denker; J. T. Mayer

doi:10.1109/istdm.2006.246502

Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

W. Zheng, James Christopher Sturm, Claire F. Gmachl, T. Buyuklimanli, J. Marino, M. S. Denker, J. T. Mayer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Publisher	IEEE Computer Society
ISBN (Print)	1424404614, 9781424404612
DOIs	https://doi.org/10.1109/istdm.2006.246502
State	Published - 2006
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: May 15 2006 → May 17 2006

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Other

Other	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country/Territory	United States
City	Princeton, NJ
Period	5/15/06 → 5/17/06

All Science Journal Classification (ASJC) codes

General Computer Science
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1109/istdm.2006.246502

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Zheng, W., Sturm, J. C., Gmachl, C. F., Buyuklimanli, T., Marino, J., Denker, M. S., & Mayer, J. T. (2006). Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest Article 1715996 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006). IEEE Computer Society. https://doi.org/10.1109/istdm.2006.246502

Zheng, W. ; Sturm, James Christopher ; Gmachl, Claire F. et al. / Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications. Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society, 2006. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest).

@inproceedings{779e1cb9688148349d73ad677a275944,

title = "Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications",

author = "W. Zheng and Sturm, {James Christopher} and Gmachl, {Claire F.} and T. Buyuklimanli and J. Marino and Denker, {M. S.} and Mayer, {J. T.}",

year = "2006",

doi = "10.1109/istdm.2006.246502",

language = "English (US)",

isbn = "1424404614",

series = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

publisher = "IEEE Computer Society",

booktitle = "Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest",

address = "United States",

note = "Third International SiGe Technology and Device Meeting, ISTDM 2006 ; Conference date: 15-05-2006 Through 17-05-2006",

}

Zheng, W, Sturm, JC , Gmachl, CF, Buyuklimanli, T, Marino, J, Denker, MS & Mayer, JT 2006, Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1715996, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, IEEE Computer Society, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 5/15/06. https://doi.org/10.1109/istdm.2006.246502

Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications. / Zheng, W.; Sturm, James Christopher ; Gmachl, Claire F. et al.
Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society, 2006. 1715996 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

AU - Zheng, W.

AU - Sturm, James Christopher

AU - Gmachl, Claire F.

AU - Buyuklimanli, T.

AU - Marino, J.

AU - Denker, M. S.

AU - Mayer, J. T.

PY - 2006

Y1 - 2006

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UR - http://www.scopus.com/inward/citedby.url?scp=34247466508&partnerID=8YFLogxK

U2 - 10.1109/istdm.2006.246502

DO - 10.1109/istdm.2006.246502

M3 - Conference contribution

AN - SCOPUS:34247466508

SN - 1424404614

SN - 9781424404612

T3 - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

BT - Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest

PB - IEEE Computer Society

T2 - Third International SiGe Technology and Device Meeting, ISTDM 2006

Y2 - 15 May 2006 through 17 May 2006

ER -

Zheng W, Sturm JC , Gmachl CF, Buyuklimanli T, Marino J, Denker MS et al. Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. IEEE Computer Society. 2006. 1715996. (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest). doi: 10.1109/istdm.2006.246502

Growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications

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