Growth of the organic molecular semiconductor ptcda on se-passivated GaAs(100): an stm study

C. Kendrick, A. Kahn

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

We investigate the monolayer and multilayer growth of the organic molecular semiconductor (OMS) 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) on the Se-passivated GaAs(100) (2 × 1) surface using STM. Deposition of ∼ 2 ML PTCDA at room temperature results in the formation of clusters, implying good chemical passivation of the substrate. However, we also find a significant number of molecules pinned at high energy defect sites, some of which induce molecular ordering. At higher PTCDA coverage we find that the film invariably orients to the substrate revealing a critical, though weak, molecule-substrate interaction. We present the first molecularly resolved STM images obtained from a thick PTCDA film (∼ 60 Å) and show unit cell dimensions and orientation in excellent agreement with our previous LEED study.

Original languageEnglish (US)
Pages (from-to)289-293
Number of pages5
JournalSurface Review and Letters
Volume5
Issue number1
DOIs
StatePublished - Jan 1 1998

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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