Growth of Si1-xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

James Christopher Sturm, P. V. Schwartz, E. J. Prinz, H. Manoharan

Research output: Contribution to journalArticle

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Abstract

Rapid thermal chemical vapor deposition has been applied towards the growth of Si and Si1-xGex structures on a 100 Å scale. In this paper the relative merits of gas switching versus temperature switching for the growth of such structures are discussed. Active temperature control in the 600-700°C range using infrared transmission for temperature measurement is demonstrated. The growth technique is applied to 45 Å period superlattices with individual layer temperature control, and to heterojunction bipolar transistors with near-ideal electrical characteristics.

Original languageEnglish (US)
Pages (from-to)2011-2016
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number4
DOIs
StatePublished - Jul 1 1991

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • (SiGe)
  • Binary alloys
  • Bipolar transistors
  • Chemical vapor deposition
  • Germanium alloys
  • Heterojunctions
  • High temperature
  • Silicon alloys
  • Superlattices
  • Temperature effects

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