Growth of Si1-xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

James Christopher Sturm; P. V. Schwartz; E. J. Prinz; H. Manoharan

doi:10.1116/1.585395

Growth of Si_1-xGe_x by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

James Christopher Sturm, P. V. Schwartz, E. J. Prinz, H. Manoharan

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

Rapid thermal chemical vapor deposition has been applied towards the growth of Si and Si_1-xGe_x structures on a 100 Å scale. In this paper the relative merits of gas switching versus temperature switching for the growth of such structures are discussed. Active temperature control in the 600-700°C range using infrared transmission for temperature measurement is demonstrated. The growth technique is applied to 45 Å period superlattices with individual layer temperature control, and to heterojunction bipolar transistors with near-ideal electrical characteristics.

Original language	English (US)
Pages (from-to)	2011-2016
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	9
Issue number	4
DOIs	https://doi.org/10.1116/1.585395
State	Published - Jul 1 1991

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

(SiGe)
Binary alloys
Bipolar transistors
Chemical vapor deposition
Germanium alloys
Heterojunctions
High temperature
Silicon alloys
Superlattices
Temperature effects

Access to Document

10.1116/1.585395

Cite this

@article{6bf02b6a5c5b4337b7860ad8adb242d6,

title = "Growth of Si1-xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors",

abstract = "Rapid thermal chemical vapor deposition has been applied towards the growth of Si and Si1-xGex structures on a 100 {\AA} scale. In this paper the relative merits of gas switching versus temperature switching for the growth of such structures are discussed. Active temperature control in the 600-700°C range using infrared transmission for temperature measurement is demonstrated. The growth technique is applied to 45 {\AA} period superlattices with individual layer temperature control, and to heterojunction bipolar transistors with near-ideal electrical characteristics.",

keywords = "(SiGe), Binary alloys, Bipolar transistors, Chemical vapor deposition, Germanium alloys, Heterojunctions, High temperature, Silicon alloys, Superlattices, Temperature effects",

author = "Sturm, {James Christopher} and Schwartz, {P. V.} and Prinz, {E. J.} and H. Manoharan",

year = "1991",

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Growth of Si_1-xGe_x by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors. / Sturm, James Christopher; Schwartz, P. V.; Prinz, E. J. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 4, 01.07.1991, p. 2011-2016.

Research output: Contribution to journal › Article › peer-review

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T1 - Growth of Si1-xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

AU - Sturm, James Christopher

AU - Schwartz, P. V.

AU - Prinz, E. J.

AU - Manoharan, H.

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KW - (SiGe)

KW - Binary alloys

KW - Bipolar transistors

KW - Chemical vapor deposition

KW - Germanium alloys

KW - Heterojunctions

KW - High temperature

KW - Silicon alloys

KW - Superlattices

KW - Temperature effects

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