Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy

Mansour Shayegan, V. J. Goldman, C. Jiang, T. Sajoto, M. Santos

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

We report on the growth of modulation-doped GaAs/Alx Ga 1-xAs heterostructures with mobilities (μ) on the order of 1×106 cm2 /V s (at 4.2 K) and areal densities (ns) below 8×1010 cm-2. In growing these structures we employ the atomic plane doping technique and ultrathick (>1000 Å) spacer layers. The mobilities of these structures are the highest ever reported for low densities. Measurements of μ vs ns as a function of illumination or gate voltage indicate μ∼ns α behavior with α≃0.6 and, even for ns ≃1.4×1010 cm-2, μ has a value in excess of 0.3×106 cm2 /V s.

Original languageEnglish (US)
Pages (from-to)1086-1088
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number13
DOIs
StatePublished - Dec 1 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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