Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy

M. Shayegan; V. J. Goldman; C. Jiang; T. Sajoto; M. Santos

doi:10.1063/1.99219

Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy

M. Shayegan, V. J. Goldman, C. Jiang, T. Sajoto, M. Santos

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Abstract

We report on the growth of modulation-doped GaAs/Al_x Ga _1-xAs heterostructures with mobilities (μ) on the order of 1×10⁶ cm² /V s (at 4.2 K) and areal densities (n_s) below 8×10¹⁰ cm^-2. In growing these structures we employ the atomic plane doping technique and ultrathick (>1000 Å) spacer layers. The mobilities of these structures are the highest ever reported for low densities. Measurements of μ vs n_s as a function of illumination or gate voltage indicate μ∼n_s ^α behavior with α≃0.6 and, even for n_s ≃1.4×10¹⁰ cm^-2, μ has a value in excess of 0.3×10⁶ cm² /V s.

Original language	English (US)
Pages (from-to)	1086-1088
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	13
DOIs	https://doi.org/10.1063/1.99219
State	Published - 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.99219

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title = "Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy",

abstract = "We report on the growth of modulation-doped GaAs/Alx Ga 1-xAs heterostructures with mobilities (μ) on the order of 1×106 cm2 /V s (at 4.2 K) and areal densities (ns) below 8×1010 cm-2. In growing these structures we employ the atomic plane doping technique and ultrathick (>1000 {\AA}) spacer layers. The mobilities of these structures are the highest ever reported for low densities. Measurements of μ vs ns as a function of illumination or gate voltage indicate μ∼ns α behavior with α≃0.6 and, even for ns ≃1.4×1010 cm-2, μ has a value in excess of 0.3×106 cm2 /V s.",

author = "M. Shayegan and Goldman, {V. J.} and C. Jiang and T. Sajoto and M. Santos",

year = "1988",

doi = "10.1063/1.99219",

language = "English (US)",

volume = "52",

pages = "1086--1088",

journal = "Applied Physics Letters",

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T1 - Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy

AU - Shayegan, M.

AU - Goldman, V. J.

AU - Jiang, C.

AU - Sajoto, T.

AU - Santos, M.

PY - 1988

Y1 - 1988

N2 - We report on the growth of modulation-doped GaAs/Alx Ga 1-xAs heterostructures with mobilities (μ) on the order of 1×106 cm2 /V s (at 4.2 K) and areal densities (ns) below 8×1010 cm-2. In growing these structures we employ the atomic plane doping technique and ultrathick (>1000 Å) spacer layers. The mobilities of these structures are the highest ever reported for low densities. Measurements of μ vs ns as a function of illumination or gate voltage indicate μ∼ns α behavior with α≃0.6 and, even for ns ≃1.4×1010 cm-2, μ has a value in excess of 0.3×106 cm2 /V s.

AB - We report on the growth of modulation-doped GaAs/Alx Ga 1-xAs heterostructures with mobilities (μ) on the order of 1×106 cm2 /V s (at 4.2 K) and areal densities (ns) below 8×1010 cm-2. In growing these structures we employ the atomic plane doping technique and ultrathick (>1000 Å) spacer layers. The mobilities of these structures are the highest ever reported for low densities. Measurements of μ vs ns as a function of illumination or gate voltage indicate μ∼ns α behavior with α≃0.6 and, even for ns ≃1.4×1010 cm-2, μ has a value in excess of 0.3×106 cm2 /V s.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxy

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