Growth of GaAs/Ca0.45Sr0.55F2/GaAs structures by molecular beam epitaxy

S. Horng; Antoine Kahn; C. Wrenn; R. Pfeffer

doi:10.1016/0921-5107(91)90184-W

Growth of GaAs/Ca_0.45Sr_0.55F₂/GaAs structures by molecular beam epitaxy

S. Horng
, Antoine Kahn
, C. Wrenn
, R. Pfeffer

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Lattice-matched GaAs/Ca_0.45Sr_0.55F₂/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χ_min = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χ_min = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.

Original language	English (US)
Pages (from-to)	263-267
Number of pages	5
Journal	Materials Science and Engineering B
Volume	9
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(91)90184-W
State	Published - Jul 15 1991

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(91)90184-W

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@article{5aa05a98679b4862861e05198f4be331,

title = "Growth of GaAs/Ca0.45Sr0.55F2/GaAs structures by molecular beam epitaxy",

abstract = "Lattice-matched GaAs/Ca0.45Sr0.55F2/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χmin = 7\% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χmin = 30\%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.",

author = "S. Horng and Antoine Kahn and C. Wrenn and R. Pfeffer",

note = "Funding Information: Support for this work by the Army Research Office (DAAL03-89-K-0035) is gratefully acknowledged.",

year = "1991",

month = jul,

day = "15",

doi = "10.1016/0921-5107(91)90184-W",

language = "English (US)",

volume = "9",

pages = "263--267",

journal = "Materials Science and Engineering B",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "1-3",

}

TY - JOUR

T1 - Growth of GaAs/Ca0.45Sr0.55F2/GaAs structures by molecular beam epitaxy

AU - Horng, S.

AU - Kahn, Antoine

AU - Wrenn, C.

AU - Pfeffer, R.

N1 - Funding Information: Support for this work by the Army Research Office (DAAL03-89-K-0035) is gratefully acknowledged.

PY - 1991/7/15

Y1 - 1991/7/15

N2 - Lattice-matched GaAs/Ca0.45Sr0.55F2/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χmin = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χmin = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.

AB - Lattice-matched GaAs/Ca0.45Sr0.55F2/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χmin = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χmin = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.

UR - https://www.scopus.com/pages/publications/0026193511

UR - https://www.scopus.com/pages/publications/0026193511#tab=citedBy

U2 - 10.1016/0921-5107(91)90184-W

DO - 10.1016/0921-5107(91)90184-W

M3 - Article

AN - SCOPUS:0026193511

SN - 0921-5107

VL - 9

SP - 263

EP - 267

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

Growth of GaAs/Ca_0.45Sr_0.55F₂/GaAs structures by molecular beam epitaxy

Abstract

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