Growth of GaAs/Ca0.45Sr0.55F2/GaAs structures by molecular beam epitaxy

S. Horng; Antoine Kahn; C. Wrenn; R. Pfeffer

doi:10.1016/0921-5107(91)90184-W

Growth of GaAs/Ca_0.45Sr_0.55F₂/GaAs structures by molecular beam epitaxy

S. Horng, Antoine Kahn, C. Wrenn, R. Pfeffer

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Lattice-matched GaAs/Ca_0.45Sr_0.55F₂/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χ_min = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χ_min = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.

Original language	English (US)
Pages (from-to)	263-267
Number of pages	5
Journal	Materials Science and Engineering B
Volume	9
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(91)90184-W
State	Published - Jul 15 1991

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(91)90184-W

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title = "Growth of GaAs/Ca0.45Sr0.55F2/GaAs structures by molecular beam epitaxy",

abstract = "Lattice-matched GaAs/Ca0.45Sr0.55F2/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χmin = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χmin = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.",

author = "S. Horng and Antoine Kahn and C. Wrenn and R. Pfeffer",

note = "Funding Information: Support for this work by the Army Research Office (DAAL03-89-K-0035) is gratefully acknowledged.",

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doi = "10.1016/0921-5107(91)90184-W",

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T1 - Growth of GaAs/Ca0.45Sr0.55F2/GaAs structures by molecular beam epitaxy

AU - Horng, S.

AU - Kahn, Antoine

AU - Wrenn, C.

AU - Pfeffer, R.

N1 - Funding Information: Support for this work by the Army Research Office (DAAL03-89-K-0035) is gratefully acknowledged.

PY - 1991/7/15

Y1 - 1991/7/15

N2 - Lattice-matched GaAs/Ca0.45Sr0.55F2/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χmin = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χmin = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.

AB - Lattice-matched GaAs/Ca0.45Sr0.55F2/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χmin = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χmin = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.

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ER -

Growth of GaAs/Ca_0.45Sr_0.55F₂/GaAs structures by molecular beam epitaxy

Abstract

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