Growth of GaAs/Ca0.45Sr0.55F2/GaAs structures by molecular beam epitaxy

S. Horng, Antoine Kahn, C. Wrenn, R. Pfeffer

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Lattice-matched GaAs/Ca0.45Sr0.55F2/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χmin = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χmin = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.

Original languageEnglish (US)
Pages (from-to)263-267
Number of pages5
JournalMaterials Science and Engineering B
Volume9
Issue number1-3
DOIs
StatePublished - Jul 15 1991

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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