Lattice-matched GaAs/Ca0.45Sr0.55F2/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530°C and show excellent crystallinity (χmin = 7% in ion channeling). The best GaAs layers are obtained around 600°C and show medium bulk crystallinity (χmin = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering