GROWTH MECHANISMS DURING THIN FILM CRYSTALLIZATION FROM THE MELT.

Loren Pfeiffer, A. E. Gelman, K. A. Jackson, K. W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations

Abstract

Authors develop a model that appears to account for the existence of a new mode of crystallization recently discovered during zone-melt-recrystallization (ZMR) of silicon thin films on SiO//2 using a scanned strip heater or lamp. Transition to the new crystallization regime is induced by reducing the temperature of the scanned upper heater strip, thus reducing dT/dy, the thermal gradient along the direction of scan at the silicon solidification front. If dT/dy less than equivalent to 4 degree K/mm, the single crystal films have long non-branched subboundaries with tilt misalignments of 0. 1 degree or less, a lateral separation in excess of 50 mu m, and consist of rows of short dislocations threading through the film thickness and terminating at the two SiO//2 layers. This is in marked contrast to material ZMR scanned at higher dT/dy which shows conventionally branched 1 degree to 3 degree subboundaries that consist of edge dislocations running in the plane of the film often for several hundred microns. Authors propose that the melt-freezing interface profiles at these interior corner intersections are aligned approximately normal to the scan in the high gradient case, but become tilted towards the plane of the SiO//2 cap layer for the low gradient case. This tilting accounts in a natural way for the transition from in-plane to threading dislocations.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsMichael O. Thompson, S.Thomas Picraux, James S. Williams
PublisherMaterials Research Soc
Pages543-553
Number of pages11
ISBN (Print)0931837405
StatePublished - 1987
Externally publishedYes
EventBeam-Solid Interact and Transient Processes - Boston, MA, USA
Duration: Dec 1 1986Dec 4 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume74
ISSN (Print)0272-9172

Conference

ConferenceBeam-Solid Interact and Transient Processes
CityBoston, MA, USA
Period12/1/8612/4/86

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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