Loren Pfeiffer, A. E. Gelman, K. A. Jackson, K. W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations


Authors develop a model that appears to account for the existence of a new mode of crystallization recently discovered during zone-melt-recrystallization (ZMR) of silicon thin films on SiO//2 using a scanned strip heater or lamp. Transition to the new crystallization regime is induced by reducing the temperature of the scanned upper heater strip, thus reducing dT/dy, the thermal gradient along the direction of scan at the silicon solidification front. If dT/dy less than equivalent to 4 degree K/mm, the single crystal films have long non-branched subboundaries with tilt misalignments of 0. 1 degree or less, a lateral separation in excess of 50 mu m, and consist of rows of short dislocations threading through the film thickness and terminating at the two SiO//2 layers. This is in marked contrast to material ZMR scanned at higher dT/dy which shows conventionally branched 1 degree to 3 degree subboundaries that consist of edge dislocations running in the plane of the film often for several hundred microns. Authors propose that the melt-freezing interface profiles at these interior corner intersections are aligned approximately normal to the scan in the high gradient case, but become tilted towards the plane of the SiO//2 cap layer for the low gradient case. This tilting accounts in a natural way for the transition from in-plane to threading dislocations.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsMichael O. Thompson, S.Thomas Picraux, James S. Williams
PublisherMaterials Research Soc
Number of pages11
ISBN (Print)0931837405
StatePublished - 1987
Externally publishedYes
EventBeam-Solid Interact and Transient Processes - Boston, MA, USA
Duration: Dec 1 1986Dec 4 1986

Publication series

NameMaterials Research Society Symposia Proceedings
ISSN (Print)0272-9172


ConferenceBeam-Solid Interact and Transient Processes
CityBoston, MA, USA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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