@inproceedings{3f87cb778d5b4d1ebd3081162c2a2a61,
title = "GROWTH MECHANISMS DURING THIN FILM CRYSTALLIZATION FROM THE MELT.",
abstract = "Authors develop a model that appears to account for the existence of a new mode of crystallization recently discovered during zone-melt-recrystallization (ZMR) of silicon thin films on SiO//2 using a scanned strip heater or lamp. Transition to the new crystallization regime is induced by reducing the temperature of the scanned upper heater strip, thus reducing dT/dy, the thermal gradient along the direction of scan at the silicon solidification front. If dT/dy less than equivalent to 4 degree K/mm, the single crystal films have long non-branched subboundaries with tilt misalignments of 0. 1 degree or less, a lateral separation in excess of 50 mu m, and consist of rows of short dislocations threading through the film thickness and terminating at the two SiO//2 layers. This is in marked contrast to material ZMR scanned at higher dT/dy which shows conventionally branched 1 degree to 3 degree subboundaries that consist of edge dislocations running in the plane of the film often for several hundred microns. Authors propose that the melt-freezing interface profiles at these interior corner intersections are aligned approximately normal to the scan in the high gradient case, but become tilted towards the plane of the SiO//2 cap layer for the low gradient case. This tilting accounts in a natural way for the transition from in-plane to threading dislocations.",
author = "Loren Pfeiffer and Gelman, {A. E.} and Jackson, {K. A.} and West, {K. W.}",
year = "1987",
language = "English (US)",
isbn = "0931837405",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "543--553",
editor = "Thompson, {Michael O.} and S.Thomas Picraux and Williams, {James S.}",
booktitle = "Materials Research Society Symposia Proceedings",
note = "Beam-Solid Interact and Transient Processes ; Conference date: 01-12-1986 Through 04-12-1986",
}