Growth, crystal structure and magnetic characterization of Zn-stabilized CePtIn4

Elizabeth M. Carnicom, Tomasz Klimczuk, Fabian Von Rohr, Michal J. Winiarski, Tai Kong, Karoline Stolze, Weiwei Xie, Satya K. Kushwaha, Robert J. Cava

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The growth and characterization of CePtIn4, stabilized by 10% Zn substitution for In, is reported. The new material is orthorhombic, space group Cmcm (No. 63), with lattice parameters a = 4.51751(4) Å, b = 16.7570(2) Å, and c = 7.36682(8) Å, and the refined crystal composition has 10% of Zn substituted for In, i.e., the crystals are CePt(In0.9Zn0.1)4. Crystals were grown using a self-flux method: only growths containing Zn yielded CePtIn4 crystals, while Ce3Pt4In13 crystals formed when Zn was not present. Anisotropic temperature-dependent magnetic susceptibilities for single crystals show that Zn-stabilized CePtIn4 orders magnetically at ~1.9 K. High-temperature Curie–Weiss fits indicate an effective moment of ~2.49 μB/Ce and a directionally averaged Weiss-temperature of approximately −31 K. Specific heat data shows a peak consistent with the ordering temperature seen in the magnetic susceptibility data. Zn-stabilized CePtIn4 is metallic and displays no superconducting transition down to 0.14 K.

Original languageEnglish (US)
Article number084710
JournalJournal of the Physical Society of Japan
Volume86
Issue number8
DOIs
StatePublished - Aug 15 2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Growth, crystal structure and magnetic characterization of Zn-stabilized CePtIn<sub>4</sub>'. Together they form a unique fingerprint.

  • Cite this

    Carnicom, E. M., Klimczuk, T., Von Rohr, F., Winiarski, M. J., Kong, T., Stolze, K., Xie, W., Kushwaha, S. K., & Cava, R. J. (2017). Growth, crystal structure and magnetic characterization of Zn-stabilized CePtIn4. Journal of the Physical Society of Japan, 86(8), [084710]. https://doi.org/10.7566/JPSJ.86.084710