Growth and photoluminescence of strained 〈 110 〉 Si/Si_1-xGe_x/Si quantum wells grown by rapid thermal chemical vapor deposition

Engineering

• Alloy Layer 50%
• Growth Condition 50%
• Low Growth Rate 50%
• Quantum Confinement 50%
• Si Substrate 100%
• Thick Layer 50%

Material Science

• Chemical Vapor Deposition 25%
• Film 25%
• Photoluminescence 100%
• Quantum Well 100%
• Thermal Chemical Vapor Deposition 100%

Keyphrases

• Alloy Layer 25%
• Angstrom 50%
• Chemical Vapor Deposition Growth 25%
• Confinement Energy 25%
• Ge Composition 25%
• Low Growth Rate 25%
• Photoluminescence Spectra 25%
• Photoluminescence Studies 25%
• Quantum Confinement 25%
• Si Substrate 50%
• Si1-xGex Alloy 25%