Growth and photoluminescence of strained 〈 110 〉 Si/Si1-xGex/Si quantum wells grown by rapid thermal chemical vapor deposition

C. W. Liu, James Christopher Sturm, Y. R.J. Lacroix, M. L.W. Thewalt, D. D. Perovic

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2 Scopus citations


We report the first chemical vapor deposition growth and systematic photoluminescence study of strained Si1-xGex alloy layers on 〈 110 〉 Si substrates. Compared to 〈 100 〉 Si substrates, the same growth conditions yielded a slightly lower Ge composition, but a much lower growth rate. For thick layers, the relaxation along [110] direction is insufficient and lead to predominantly uniaxial strain in the the films. From the photoluminescence, the bandgap of strained Si1-xGex on 〈 110 〉 Si for 0.16 ≤ × ≤ 0.43 is determined and compared to theory. A strong 'no-phonon' emission process in photoluminescence spectra of strained 〈 110 〉 Si/Si1-xGex/Si was observed as compared with that observed in 〈 100 〉 layers. Finally, quantum confinement shift of Si/Si0.71Ge0.29/Si wells with a confinement energy up to 110 meV has been observed by varying the well width from 133 angstrom to 17 angstrom.

Original languageEnglish (US)
Pages (from-to)37-42
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1994
EventProceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 4 1994Apr 7 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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