Growth and photoluminescence of strained 〈 110 〉 Si/Si1-xGex/Si quantum wells grown by rapid thermal chemical vapor deposition

C. W. Liu; J. C. Sturm; Y. R.J. Lacroix; M. L.W. Thewalt; D. D. Perovic

Growth and photoluminescence of strained 〈 110 〉 Si/Si_1-xGe_x/Si quantum wells grown by rapid thermal chemical vapor deposition

C. W. Liu, J. C. Sturm, Y. R.J. Lacroix, M. L.W. Thewalt, D. D. Perovic

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report the first chemical vapor deposition growth and systematic photoluminescence study of strained Si_1-xGe_x alloy layers on 〈 110 〉 Si substrates. Compared to 〈 100 〉 Si substrates, the same growth conditions yielded a slightly lower Ge composition, but a much lower growth rate. For thick layers, the relaxation along [110] direction is insufficient and lead to predominantly uniaxial strain in the the films. From the photoluminescence, the bandgap of strained Si_1-xGe_x on 〈 110 〉 Si for 0.16 ≤ × ≤ 0.43 is determined and compared to theory. A strong 'no-phonon' emission process in photoluminescence spectra of strained 〈 110 〉 Si/Si_1-xGe_x/Si was observed as compared with that observed in 〈 100 〉 layers. Finally, quantum confinement shift of Si/Si_0.71Ge_0.29/Si wells with a confinement energy up to 110 meV has been observed by varying the well width from 133 angstrom to 17 angstrom.

Original language	English (US)
Pages (from-to)	37-42
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	342
State	Published - 1994
Event	Proceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 7 1994

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{7812bcd454ef4e2490da53a4920fa2f0,

title = "Growth and photoluminescence of strained 〈 110 〉 Si/Si1-xGex/Si quantum wells grown by rapid thermal chemical vapor deposition",

abstract = "We report the first chemical vapor deposition growth and systematic photoluminescence study of strained Si1-xGex alloy layers on 〈 110 〉 Si substrates. Compared to 〈 100 〉 Si substrates, the same growth conditions yielded a slightly lower Ge composition, but a much lower growth rate. For thick layers, the relaxation along [110] direction is insufficient and lead to predominantly uniaxial strain in the the films. From the photoluminescence, the bandgap of strained Si1-xGex on 〈 110 〉 Si for 0.16 ≤ × ≤ 0.43 is determined and compared to theory. A strong 'no-phonon' emission process in photoluminescence spectra of strained 〈 110 〉 Si/Si1-xGex/Si was observed as compared with that observed in 〈 100 〉 layers. Finally, quantum confinement shift of Si/Si0.71Ge0.29/Si wells with a confinement energy up to 110 meV has been observed by varying the well width from 133 angstrom to 17 angstrom.",

author = "Liu, {C. W.} and Sturm, {J. C.} and Lacroix, {Y. R.J.} and Thewalt, {M. L.W.} and Perovic, {D. D.}",

year = "1994",

language = "English (US)",

volume = "342",

pages = "37--42",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 Spring Meeting of the Materials Research Society ; Conference date: 04-04-1994 Through 07-04-1994",

}

TY - JOUR

T1 - Growth and photoluminescence of strained 〈 110 〉 Si/Si1-xGex/Si quantum wells grown by rapid thermal chemical vapor deposition

AU - Liu, C. W.

AU - Sturm, J. C.

AU - Lacroix, Y. R.J.

AU - Thewalt, M. L.W.

AU - Perovic, D. D.

PY - 1994

Y1 - 1994

N2 - We report the first chemical vapor deposition growth and systematic photoluminescence study of strained Si1-xGex alloy layers on 〈 110 〉 Si substrates. Compared to 〈 100 〉 Si substrates, the same growth conditions yielded a slightly lower Ge composition, but a much lower growth rate. For thick layers, the relaxation along [110] direction is insufficient and lead to predominantly uniaxial strain in the the films. From the photoluminescence, the bandgap of strained Si1-xGex on 〈 110 〉 Si for 0.16 ≤ × ≤ 0.43 is determined and compared to theory. A strong 'no-phonon' emission process in photoluminescence spectra of strained 〈 110 〉 Si/Si1-xGex/Si was observed as compared with that observed in 〈 100 〉 layers. Finally, quantum confinement shift of Si/Si0.71Ge0.29/Si wells with a confinement energy up to 110 meV has been observed by varying the well width from 133 angstrom to 17 angstrom.

AB - We report the first chemical vapor deposition growth and systematic photoluminescence study of strained Si1-xGex alloy layers on 〈 110 〉 Si substrates. Compared to 〈 100 〉 Si substrates, the same growth conditions yielded a slightly lower Ge composition, but a much lower growth rate. For thick layers, the relaxation along [110] direction is insufficient and lead to predominantly uniaxial strain in the the films. From the photoluminescence, the bandgap of strained Si1-xGex on 〈 110 〉 Si for 0.16 ≤ × ≤ 0.43 is determined and compared to theory. A strong 'no-phonon' emission process in photoluminescence spectra of strained 〈 110 〉 Si/Si1-xGex/Si was observed as compared with that observed in 〈 100 〉 layers. Finally, quantum confinement shift of Si/Si0.71Ge0.29/Si wells with a confinement energy up to 110 meV has been observed by varying the well width from 133 angstrom to 17 angstrom.

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UR - http://www.scopus.com/inward/citedby.url?scp=0028076666&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028076666

SN - 0272-9172

VL - 342

SP - 37

EP - 42

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 Spring Meeting of the Materials Research Society

Y2 - 4 April 1994 through 7 April 1994

ER -

Growth and photoluminescence of strained 〈 110 〉 Si/Si_1-xGe_x/Si quantum wells grown by rapid thermal chemical vapor deposition

Abstract

All Science Journal Classification (ASJC) codes

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