Growth and morphology of pentacene films on oxide surfaces

Ricardo Ruiz; Leonard C. Feldman; Richard F. Haglund; Rodney A. McKee; Norbert Koch; Bert A. Nickel; Jens Pflaum; Giacinto Scoles; Antoine Kahn

Growth and morphology of pentacene films on oxide surfaces

Ricardo Ruiz, Leonard C. Feldman, Richard F. Haglund, Rodney A. McKee, Norbert Koch, Bert A. Nickel, Jens Pflaum, Giacinto Scoles, Antoine Kahn

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1 Scopus citations

Abstract

Pentacene thin films were grown in ultra high vacuum on amorphous SiO₂ and on a high dielectric constant material, crystalline BaTiO₃. During pentacene deposition, substrates were held at three different temperatures (-65⁰, 25⁰ and 75⁰ C). In general, three different morphologies were identified: A first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.

Original language	English (US)
Pages (from-to)	415-421
Number of pages	7
Journal	Materials Research Society Symposium - Proceedings
Volume	708
State	Published - 2002

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Growth and morphology of pentacene films on oxide surfaces",

abstract = "Pentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: A first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.",

author = "Ricardo Ruiz and Feldman, {Leonard C.} and Haglund, {Richard F.} and McKee, {Rodney A.} and Norbert Koch and Nickel, {Bert A.} and Jens Pflaum and Giacinto Scoles and Antoine Kahn",

year = "2002",

language = "English (US)",

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pages = "415--421",

journal = "Materials Research Society Symposium - Proceedings",

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T1 - Growth and morphology of pentacene films on oxide surfaces

AU - Ruiz, Ricardo

AU - Feldman, Leonard C.

AU - Haglund, Richard F.

AU - McKee, Rodney A.

AU - Koch, Norbert

AU - Nickel, Bert A.

AU - Pflaum, Jens

AU - Scoles, Giacinto

AU - Kahn, Antoine

PY - 2002

Y1 - 2002

N2 - Pentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: A first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.

AB - Pentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: A first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.

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M3 - Article

AN - SCOPUS:0036044797

SN - 0272-9172

VL - 708

SP - 415

EP - 421

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Growth and morphology of pentacene films on oxide surfaces

Abstract

All Science Journal Classification (ASJC) codes

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