Abstract
Pentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: A first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.
Original language | English (US) |
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Pages (from-to) | 415-421 |
Number of pages | 7 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 708 |
State | Published - 2002 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering