Growth and electrical performance of heterojunction p+Si1-x-yGexCy/p-Si diodes

C. L. Chang, A. St Amour, L. D. Lanzerotti, J. C. Sturm

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3 Scopus citations

Abstract

We have fabricated heterojunction p+Si1-x-yGexCy/ p-Si diodes. The SiGeC layers were grown epitaxially on Si (100) substrates by the rapid thermal chemical vapor deposition (RTCVD) technique using methysilane gas as a carbon precursor. The germanium concentration is 20% in these SiGeC alloys and the carbon concentrations are in the range of 0% to 1%. By studying the current-voltage characteristics of these diodes as a function of temperature the valence band discontinuities between SiGeC and Si layers were obtained as a function of carbon concentrations. We have found that the valence band discontinuity of the SiGe/Si heterostructure decreases by 11 meV when 1% of carbon is incorporated. Photoluminescence (PL) results show that 1% carbon increases the bandgap of strained p+SiGe alloys by 25 meV. This would imply that the conduction band discontinuity of SiGe/Si will decrease by 14 meV when 1% carbon is incorporated.

Original languageEnglish (US)
Pages (from-to)437-442
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume402
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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