Abstract
The authors report, for the first time, the new two-color quantum well infrared photodetectors (QWIPs) from a non-III-V semiconductor material system. The samples were grown on InP substrate by molecular beam epitaxy. X-ray diffraction and photoluminescence measurements showed high structural and optical quality of the samples. Two intersubband (ISB) absorption peaks in two different wavelength regions are observed in Fourier transform infrared measurements. The two-color photodetectors can be turned on separately or simultaneously in the two spectral regions.
Original language | English (US) |
---|---|
Pages (from-to) | 673-676 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 13 |
Issue number | 7-9 |
DOIs | |
State | Published - Jul 1 2016 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
Keywords
- ZnCdMgSe
- ZnCdSe
- molecular beam epitaxy
- quantum well infrared photodetector
- two-color