Growth and characterization of ZnCdSe/ZnCdMgSe two-color quantum well infrared photodetectors

Guopeng Chen; Yasin Kaya; Arvind Pawan Ravikumar; Maria C. Tamargo; Claire F. Gmachl; Aidong Shen

doi:10.1002/pssc.201510257

Growth and characterization of ZnCdSe/ZnCdMgSe two-color quantum well infrared photodetectors

Guopeng Chen, Yasin Kaya, Arvind Pawan Ravikumar, Maria C. Tamargo, Claire F. Gmachl, Aidong Shen

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The authors report, for the first time, the new two-color quantum well infrared photodetectors (QWIPs) from a non-III-V semiconductor material system. The samples were grown on InP substrate by molecular beam epitaxy. X-ray diffraction and photoluminescence measurements showed high structural and optical quality of the samples. Two intersubband (ISB) absorption peaks in two different wavelength regions are observed in Fourier transform infrared measurements. The two-color photodetectors can be turned on separately or simultaneously in the two spectral regions. (

Original language	English (US)
Pages (from-to)	673-676
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	13
Issue number	7-9
DOIs	https://doi.org/10.1002/pssc.201510257
State	Published - Jul 1 2016

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.201510257

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abstract = "The authors report, for the first time, the new two-color quantum well infrared photodetectors (QWIPs) from a non-III-V semiconductor material system. The samples were grown on InP substrate by molecular beam epitaxy. X-ray diffraction and photoluminescence measurements showed high structural and optical quality of the samples. Two intersubband (ISB) absorption peaks in two different wavelength regions are observed in Fourier transform infrared measurements. The two-color photodetectors can be turned on separately or simultaneously in the two spectral regions. (",

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AU - Chen, Guopeng

AU - Kaya, Yasin

AU - Ravikumar, Arvind Pawan

AU - Tamargo, Maria C.

AU - Gmachl, Claire F.

AU - Shen, Aidong

PY - 2016/7/1

Y1 - 2016/7/1

N2 - The authors report, for the first time, the new two-color quantum well infrared photodetectors (QWIPs) from a non-III-V semiconductor material system. The samples were grown on InP substrate by molecular beam epitaxy. X-ray diffraction and photoluminescence measurements showed high structural and optical quality of the samples. Two intersubband (ISB) absorption peaks in two different wavelength regions are observed in Fourier transform infrared measurements. The two-color photodetectors can be turned on separately or simultaneously in the two spectral regions. (

AB - The authors report, for the first time, the new two-color quantum well infrared photodetectors (QWIPs) from a non-III-V semiconductor material system. The samples were grown on InP substrate by molecular beam epitaxy. X-ray diffraction and photoluminescence measurements showed high structural and optical quality of the samples. Two intersubband (ISB) absorption peaks in two different wavelength regions are observed in Fourier transform infrared measurements. The two-color photodetectors can be turned on separately or simultaneously in the two spectral regions. (

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Growth and characterization of ZnCdSe/ZnCdMgSe two-color quantum well infrared photodetectors

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