Growth and characterization of ZnCdSe/ZnCdMgSe two-color quantum well infrared photodetectors

Guopeng Chen, Yasin Kaya, Arvind Pawan Ravikumar, Maria C. Tamargo, Claire F. Gmachl, Aidong Shen

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The authors report, for the first time, the new two-color quantum well infrared photodetectors (QWIPs) from a non-III-V semiconductor material system. The samples were grown on InP substrate by molecular beam epitaxy. X-ray diffraction and photoluminescence measurements showed high structural and optical quality of the samples. Two intersubband (ISB) absorption peaks in two different wavelength regions are observed in Fourier transform infrared measurements. The two-color photodetectors can be turned on separately or simultaneously in the two spectral regions.

Original languageEnglish (US)
Pages (from-to)673-676
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume13
Issue number7-9
DOIs
StatePublished - Jul 1 2016

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Keywords

  • ZnCdMgSe
  • ZnCdSe
  • molecular beam epitaxy
  • quantum well infrared photodetector
  • two-color

Fingerprint

Dive into the research topics of 'Growth and characterization of ZnCdSe/ZnCdMgSe two-color quantum well infrared photodetectors'. Together they form a unique fingerprint.

Cite this