GROWTH AND CHARACTERIZATION OF Sb OVERLAYERS ON InP(110).

K. Li, C. R. Bonapace, Antoine Kahn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

The InP(110)-Sb( THETA ) interface, formed on cleaved room temperature InP, is studied with LEED and AES. We show that Sb grows in monolayer-high islands which coalesce at THETA equals 1ML to form a well ordered (1 multiplied by 1) structure. The nature of this overlayer is discussed. We study the growth of the amorphous Sb layer for THETA greater than 1ML. We examine the resistance of the ordered single monolayer to oxidation and draw some comparisons with other III-V(110)-Sb interfaces.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsJames D. Chadi, Walter A. Harrison
PublisherSpringer Verlag
Pages129-132
Number of pages4
ISBN (Print)0387961089
StatePublished - Dec 1 1985

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Li, K., Bonapace, C. R., & Kahn, A. (1985). GROWTH AND CHARACTERIZATION OF Sb OVERLAYERS ON InP(110). In J. D. Chadi, & W. A. Harrison (Eds.), Unknown Host Publication Title (pp. 129-132). Springer Verlag.