GROWTH AND CHARACTERIZATION OF Sb OVERLAYERS ON InP(110).

K. Li; C. R. Bonapace; Antoine Kahn

doi:10.1007/978-1-4615-7682-2_28

GROWTH AND CHARACTERIZATION OF Sb OVERLAYERS ON InP(110).

K. Li, C. R. Bonapace, Antoine Kahn

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

The InP(110)-Sb( THETA ) interface, formed on cleaved room temperature InP, is studied with LEED and AES. We show that Sb grows in monolayer-high islands which coalesce at THETA equals 1ML to form a well ordered (1 multiplied by 1) structure. The nature of this overlayer is discussed. We study the growth of the amorphous Sb layer for THETA greater than 1ML. We examine the resistance of the ordered single monolayer to oxidation and draw some comparisons with other III-V(110)-Sb interfaces.

Original language	English (US)
Title of host publication	Unknown Host Publication Title
Publisher	Springer Verlag
Pages	129-132
Number of pages	4
ISBN (Print)	0387961089, 9780387961088
DOIs	https://doi.org/10.1007/978-1-4615-7682-2_28
State	Published - 1985

All Science Journal Classification (ASJC) codes

General Engineering

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10.1007/978-1-4615-7682-2_28

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@inproceedings{fa9f11f378e5476cbf89cac10bdda261,

title = "GROWTH AND CHARACTERIZATION OF Sb OVERLAYERS ON InP(110).",

abstract = "The InP(110)-Sb( THETA ) interface, formed on cleaved room temperature InP, is studied with LEED and AES. We show that Sb grows in monolayer-high islands which coalesce at THETA equals 1ML to form a well ordered (1 multiplied by 1) structure. The nature of this overlayer is discussed. We study the growth of the amorphous Sb layer for THETA greater than 1ML. We examine the resistance of the ordered single monolayer to oxidation and draw some comparisons with other III-V(110)-Sb interfaces.",

author = "K. Li and Bonapace, {C. R.} and Antoine Kahn",

year = "1985",

doi = "10.1007/978-1-4615-7682-2_28",

language = "English (US)",

isbn = "0387961089",

publisher = "Springer Verlag",

pages = "129--132",

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TY - GEN

T1 - GROWTH AND CHARACTERIZATION OF Sb OVERLAYERS ON InP(110).

AU - Li, K.

AU - Bonapace, C. R.

AU - Kahn, Antoine

PY - 1985

Y1 - 1985

N2 - The InP(110)-Sb( THETA ) interface, formed on cleaved room temperature InP, is studied with LEED and AES. We show that Sb grows in monolayer-high islands which coalesce at THETA equals 1ML to form a well ordered (1 multiplied by 1) structure. The nature of this overlayer is discussed. We study the growth of the amorphous Sb layer for THETA greater than 1ML. We examine the resistance of the ordered single monolayer to oxidation and draw some comparisons with other III-V(110)-Sb interfaces.

AB - The InP(110)-Sb( THETA ) interface, formed on cleaved room temperature InP, is studied with LEED and AES. We show that Sb grows in monolayer-high islands which coalesce at THETA equals 1ML to form a well ordered (1 multiplied by 1) structure. The nature of this overlayer is discussed. We study the growth of the amorphous Sb layer for THETA greater than 1ML. We examine the resistance of the ordered single monolayer to oxidation and draw some comparisons with other III-V(110)-Sb interfaces.

UR - http://www.scopus.com/inward/record.url?scp=0022189282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022189282&partnerID=8YFLogxK

U2 - 10.1007/978-1-4615-7682-2_28

DO - 10.1007/978-1-4615-7682-2_28

M3 - Conference contribution

AN - SCOPUS:0022189282

SN - 0387961089

SN - 9780387961088

SP - 129

EP - 132

BT - Unknown Host Publication Title

PB - Springer Verlag

ER -

GROWTH AND CHARACTERIZATION OF Sb OVERLAYERS ON InP(110).

Abstract

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