The InP(110)-Sb( THETA ) interface, formed on cleaved room temperature InP, is studied with LEED and AES. We show that Sb grows in monolayer-high islands which coalesce at THETA equals 1ML to form a well ordered (1 multiplied by 1) structure. The nature of this overlayer is discussed. We study the growth of the amorphous Sb layer for THETA greater than 1ML. We examine the resistance of the ordered single monolayer to oxidation and draw some comparisons with other III-V(110)-Sb interfaces.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Editors||James D. Chadi, Walter A. Harrison|
|Number of pages||4|
|State||Published - Dec 1 1985|
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