Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions

H. M. Ng; Claire F. Gmachl; T. Siegrist; S. N.G. Chu; A. Y. Cho

doi:10.1002/1521-396X(200112)188:2<825::AID-PSSA825>3.0.CO;2-7

Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions

H. M. Ng, Claire F. Gmachl, T. Siegrist, S. N.G. Chu, A. Y. Cho

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20 Scopus citations

Abstract

We report the results of the growth by molecular beam epitaxy of GaN/Al_xGa_1-xN superlattice (SL) structures with single or double quantum wells and thick Al_xGa_1-xN or short-period SL barriers. The dependence of intersubband absorption on the well width for single well SL structures was systematically investigated. For GaN quantum wells interleaved with SL barriers, the upper state electron confinement was maintained by Bragg reflection from the minigaps formed within the barriers. In addition, evidence of electron transfer from doped SL barriers to undoped GaN quantum wells was obtained. Abrupt interfaces and coherent periodicities of the SL structures were confirmed by transmission electron microscopy and X-ray diffraction measurements. Intersubband absorption at peak wavelengths between 1.4 and 4.2 μm has been observed.

Original language	English (US)
Pages (from-to)	825-831
Number of pages	7
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200112)188:2<825::AID-PSSA825>3.0.CO;2-7
State	Published - Nov 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-396X(200112)188:2<825::AID-PSSA825>3.0.CO;2-7

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title = "Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions",

abstract = "We report the results of the growth by molecular beam epitaxy of GaN/AlxGa1-xN superlattice (SL) structures with single or double quantum wells and thick AlxGa1-xN or short-period SL barriers. The dependence of intersubband absorption on the well width for single well SL structures was systematically investigated. For GaN quantum wells interleaved with SL barriers, the upper state electron confinement was maintained by Bragg reflection from the minigaps formed within the barriers. In addition, evidence of electron transfer from doped SL barriers to undoped GaN quantum wells was obtained. Abrupt interfaces and coherent periodicities of the SL structures were confirmed by transmission electron microscopy and X-ray diffraction measurements. Intersubband absorption at peak wavelengths between 1.4 and 4.2 μm has been observed.",

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T1 - Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions

AU - Ng, H. M.

AU - Gmachl, Claire F.

AU - Siegrist, T.

AU - Chu, S. N.G.

AU - Cho, A. Y.

PY - 2001/11

Y1 - 2001/11

N2 - We report the results of the growth by molecular beam epitaxy of GaN/AlxGa1-xN superlattice (SL) structures with single or double quantum wells and thick AlxGa1-xN or short-period SL barriers. The dependence of intersubband absorption on the well width for single well SL structures was systematically investigated. For GaN quantum wells interleaved with SL barriers, the upper state electron confinement was maintained by Bragg reflection from the minigaps formed within the barriers. In addition, evidence of electron transfer from doped SL barriers to undoped GaN quantum wells was obtained. Abrupt interfaces and coherent periodicities of the SL structures were confirmed by transmission electron microscopy and X-ray diffraction measurements. Intersubband absorption at peak wavelengths between 1.4 and 4.2 μm has been observed.

AB - We report the results of the growth by molecular beam epitaxy of GaN/AlxGa1-xN superlattice (SL) structures with single or double quantum wells and thick AlxGa1-xN or short-period SL barriers. The dependence of intersubband absorption on the well width for single well SL structures was systematically investigated. For GaN quantum wells interleaved with SL barriers, the upper state electron confinement was maintained by Bragg reflection from the minigaps formed within the barriers. In addition, evidence of electron transfer from doped SL barriers to undoped GaN quantum wells was obtained. Abrupt interfaces and coherent periodicities of the SL structures were confirmed by transmission electron microscopy and X-ray diffraction measurements. Intersubband absorption at peak wavelengths between 1.4 and 4.2 μm has been observed.

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Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions

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