Growth and characterization of ferromagnetic Ga1-xMnxAs epilayers on (001) ZnSe

S. H. Chun; K. C. Ku; S. J. Potashnik; P. Schiffer; N. Samarth

doi:10.1116/1.1456523

Growth and characterization of ferromagnetic Ga_1-xMn_xAs epilayers on (001) ZnSe

S. H. Chun, K. C. Ku, S. J. Potashnik, P. Schiffer, N. Samarth

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

A recrystallized GaAs template was used to fabricate ferromagnetic Ga_1-xMn_xAs epilayers on ZnSe. The magnetic and transport properties of the epilayers grown using the recrystallized GaAs template were compared to those of Ga_1-xMn_xAs grown directly on GaAs. The structural defects were found to play an important role in the growth of the heterostructures.

Original language	English (US)
Pages (from-to)	1266-1269
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1456523
State	Published - May 2002
Externally published	Yes
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: Oct 1 2001 → Oct 3 2001

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1456523

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abstract = "A recrystallized GaAs template was used to fabricate ferromagnetic Ga1-xMnxAs epilayers on ZnSe. The magnetic and transport properties of the epilayers grown using the recrystallized GaAs template were compared to those of Ga1-xMnxAs grown directly on GaAs. The structural defects were found to play an important role in the growth of the heterostructures.",

author = "Chun, {S. H.} and Ku, {K. C.} and Potashnik, {S. J.} and P. Schiffer and N. Samarth",

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T1 - Growth and characterization of ferromagnetic Ga1-xMnxAs epilayers on (001) ZnSe

AU - Chun, S. H.

AU - Ku, K. C.

AU - Potashnik, S. J.

AU - Schiffer, P.

AU - Samarth, N.

PY - 2002/5

Y1 - 2002/5

N2 - A recrystallized GaAs template was used to fabricate ferromagnetic Ga1-xMnxAs epilayers on ZnSe. The magnetic and transport properties of the epilayers grown using the recrystallized GaAs template were compared to those of Ga1-xMnxAs grown directly on GaAs. The structural defects were found to play an important role in the growth of the heterostructures.

AB - A recrystallized GaAs template was used to fabricate ferromagnetic Ga1-xMnxAs epilayers on ZnSe. The magnetic and transport properties of the epilayers grown using the recrystallized GaAs template were compared to those of Ga1-xMnxAs grown directly on GaAs. The structural defects were found to play an important role in the growth of the heterostructures.

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DO - 10.1116/1.1456523

M3 - Conference article

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Growth and characterization of ferromagnetic Ga_1-xMn_xAs epilayers on (001) ZnSe

Abstract

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