Growth and band gap of strained 〈110〉 Si_1-xGe _x layers on silicon substrates by chemical vapor deposition

Engineering

• Alloy Layer 50%
• Chemical Vapor Deposition 100%
• Energy Gap 100%
• Growth Condition 50%
• Line Strength 50%
• Low Growth Rate 50%
• Si Substrate 50%
• Silicon Substrate 100%
• Vapor Deposition 100%

Material Science

• Chemical Vapor Deposition 100%
• Film 50%
• Mechanical Strength 50%
• Photoluminescence 50%
• Silicon 100%

Keyphrases

• Growth Gap 100%
• Strength Ratio 50%